4Mb: 256K x 18, 128K x 32/36
FLOW-THROUGH SYNCBURST SRAM
4Mb SYNCBURST™
SRAM
MT58L256L18F1, MT58L128L32F1,
MT58L128L36F1; MT58L256V18F1,
MT58L128V32F1, MT58L128V36F1
3.3V VDD, 3.3V or 2.5V I/O, Flow-Through
FEATURES
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100-PinTQFP
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (VDD)
• Separate +3.3V or +2.5V isolated output buffer
supply (VDDQ)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion
and address pipelining
• Clock-controlled and registered addresses, data
I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down
• 165-pin FBGA package
• 100-pin TQFP package
• Low capacitive bus loading
165-PinFBGA
• x18, x32, and x36 versions available
OPTIONS
MARKING
• Timing (Access/Cycle/MHz)
6.8ns/7.5ns/133 MHz
7.5ns/8.8ns/113 MHz
8.5ns/10ns/100 MHz
10ns/15ns/66 MHz
-6.8
-7.5
-8.5
-10
• Configurations
3.3V I/O
256K x 18
128K x 32
128K x 36
2.5V I/O
MT58L256L18F1
MT58L128L32F1
MT58L128L36F1
NOTE: 1. JEDEC-standardMS-026BHA(LQFP).
256K x 18
128K x 32
128K x 36
MT58L256V18F1
MT58L128V32F1
MT58L128V36F1
GENERALDESCRIPTION
The Micron® SyncBurst™ SRAM family employs
high-speed, low-power CMOS designs that are fabri-
cated using an advanced CMOS process.
• Packages
100-pin TQFP
165-pin FBGA
T
F*
Micron’s 4Mb SyncBurst SRAMs integrate a 256K x
18, 128K x 32, or 128K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single clock in-
put (CLK). The synchronous inputs include all ad-
dresses, all data inputs, active LOW chip enable (CE#),
two additional chip enables for easy depth expansion
(CE2#, CE2), burst control inputs (ADSC#, ADSP#,
ADV#), byte write enables (BWx#) and global write
(GW#).
• Operating Temperature Range
Commercial (0°C to +70°C)
None
IT
Industrial (-40°C to +85°C)**
Part Number Example:
MT58L256L18F1T-8.5
* A Part Marking Guide for the FBGA devices can be found on Micron’s
Web site—http://www.micron.com/support/index.html.
** Industrial temperature range offered in specific speed grades and
configurations. Contact factory for more information.
4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM
MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN
©2003,MicronTechnology,Inc.
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PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.