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MT58L128L32F1B-8.5IT PDF预览

MT58L128L32F1B-8.5IT

更新时间: 2024-02-27 13:17:54
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟静态存储器内存集成电路
页数 文件大小 规格书
31页 628K
描述
Standard SRAM, 128KX32, 8.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119

MT58L128L32F1B-8.5IT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:14 X 22 MM, PLASTIC, MS-028BHA, BGA-119
针数:119Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.75最长访问时间:8.5 ns
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
JESD-30 代码:R-PBGA-B119JESD-609代码:e0
长度:22 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:32
功能数量:1端子数量:119
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA119,7X17,50
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
座面最大高度:2.4 mm最大待机电流:0.01 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.325 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

MT58L128L32F1B-8.5IT 数据手册

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PRELIMINARY  
4Mb: 256K x 18, 128K x 32/36  
FLOW-THROUGH SYNCBURST SRAM  
4Mb SYNCBURST™  
SRAM  
MT58L256L18F1, MT58L128L32F1,  
MT58L128L36F1; MT58L256V18F1,  
MT58L128V32F1, MT58L128V36F1  
3.3V VDD, 3.3V or 2.5V I/O, Flow-Through  
FEATURES  
1
• Fast clock and OE# access times  
• Single +3.3V +0.3V/-0.165V power supply (VDD)  
• Separate +3.3V or +2.5V isolated output buffer  
supply (VDDQ)  
100-PinTQFP  
• SNOOZE MODE for reduced-power standby  
• Common data inputs and data outputs  
• Individual BYTE WRITE control and GLOBAL WRITE  
• Three chip enables for simple depth expansion  
and address pipelining  
• Clock-controlled and registered addresses, data  
I/Os and control signals  
• Internally self-timed WRITE cycle  
• Burst control pin (interleaved or linear burst)  
• Automatic power-down  
• 165-pin FBGA package  
• 100-pin TQFP package  
165-PinFBGA  
(Preliminary Package Data)  
• 119-pin BGA package  
• Low capacitive bus loading  
• x18, x32, and x36 versions available  
OPTIONS  
MARKING*  
• Timing (Access/Cycle/MHz)  
6.8ns/7.5ns/133 MHz  
7.5ns/8.8ns/113 MHz  
8.5ns/10ns/100 MHz  
10ns/15ns/66 MHz  
-6.8  
-7.5  
-8.5  
-10  
• Configurations  
3.3V I/O  
256K x 18  
128K x 32  
128K x 36  
2.5V I/O  
MT58L256L18F1  
MT58L128L32F1  
MT58L128L36F1  
2
119-Pin BGA  
256K x 18  
128K x 32  
128K x 36  
MT58L256V18F1  
MT58L128V32F1  
MT58L128V36F1  
• Packages  
100-pin TQFP  
T
F
B
165-pin FBGA  
119-pin, 14mm x 22mm BGA  
• Operating Temperature Range  
Commercial (0°C to +70°C)  
Industrial (-40°C to +85°C)**  
None  
IT  
Part Number Example:  
MT58L256L18F1T-8.5  
* A Part Marking Guide for the FBGA devices can be found on Micron’s  
website—http://www.micron.com/support/index.html.  
** Industrial temperature range offered in specific speed grades and  
configurations. Contact factory for more information.  
NOTE: 1. JEDEC-standardMS-026BHA(LQFP).  
2. JEDEC-standardMS-028BHA(PBGA).  
4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM  
MT58L256L18F1_C.p65 – Rev. 6/01  
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.  
1
©2001,MicronTechnology,Inc.  

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