Datasheet > MT45W4MW16B

MT45W4MW16B

更新时间： 2024-11-18 07:07:55

品牌	Logo	应用领域
MICROTUNE		静态存储器
页数	文件大小	规格书
61页	970K
描述
64Mbit psram use as well as sram,VBGA54 footprint

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中文翻译

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数据手册

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MT45W4MW16B 数据手册

64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory

Features

Async/Page/Burst CellularRAM 1.0 Memory

MT45W4MW16B*

*Note: Not recommended for new designs.

For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/psram/

Figure 1:

Ball Assignment – 54-Ball VFBGA

Features

•

Single device supports asynchronous, page, and

burst operations

•

Random access time: 70ns

VCC, VCCQ voltages

1.70V–1.95V VCC

CRE

LB#

OE#

1.70V–3.30V VCCQ

DQ8

DQ9

UB#

DQ10

DQ11

DQ12

DQ13

A19

CE#

DQ1

DQ3

DQ4

DQ5

WE#

A11

DQ0

DQ2

VCC

•

Page mode read access

Sixteen-word page size

Interpage read access: 70ns

Intrapage read access: 20ns

Burst mode write access

Continuous burst

VSSQ

VCCQ

DQ14

DQ15

A18

A17

A21

A14

A12

•

A16

A15

A13

A10

VSS

DQ6

DQ7

A20

Burst mode read access

4, 8, or 16 words, or continuous burst

MAX clock rate: 80 MHz ( CLK = 12.5ns)

Burst initial latency: 50ns (4 clocks) @ 80 MHz

ACLK: 9ns @ 80 MHz

•

Low power consumption

WAIT

CLK

ADV#

Asynchronous READ: <25mA

Intrapage READ: <15mA

Initial access, burst READ:

Top View

(Ball Down)

(50ns [4 clocks] @ 80 MHz) < 35mA

Continuous burst READ: <15mA

Standby: 120µA – standard

100µA – low-power option

Deep power-down: <10µA (TYP @ 25°C)

Low-power features

Temperature-compensated refresh (TCR)

Partial-array refresh (PAR)

Deep power-down (DPD) mode

Options (continued)

Designator

•

Frequency

66 MHz

80 MHz

Standby power

Standard

•

None

Low-power

Operating temperature range

Wireless (-30°C to +85°C)

Industrial (-40°C to +85°C)

Options

Designator

•

Configuration:

4 Meg x 16

MT45W4MW16B

Notes: 1. Not recommended for new designs.

2. Contact factory.

•

Package

54-ball VFBGA (standard)

54-ball VFBGA (lead-free)

Timing

3. -30°C exceeds the CellularRAM Working

Group 1.0 specification of -25°C.

•

70ns access

85ns access

-70

-85

Part Number Example:

MT45W4MW16BFB-708LWT

PDF: 09005aef80be1fbd/Source: 09005aef80be2036

Burst CellularRAM_1.fm - Rev. G 10/05 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...61

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