Datasheet > MT44K16M36

MT44K16M36

更新时间： 2024-11-21 12:23:19

品牌	Logo	应用领域
镁光 - MICRON		动态存储器
页数	文件大小	规格书
111页	6205K
描述
576Mb: x18, x36 RLDRAM 3

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中文翻译

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MT44K16M36 数据手册

‡

Advance

576Mb: x18, x36 RLDRAM 3

Features

RLDRAM 3

MT44K32M18 – 2 Meg x 18 x 16 Banks

MT44K16M36 – 1 Meg x 36 x 16 Banks

Options¹

Marking

Features

• 1066 MHz DDR operation (2133 Mb/s/ball data

rate)

• 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock

frequency)

• Organization

– 32 Meg x 18, and 16 Meg x 36 common I/O (CIO)

– 16 banks

• 1.2V center-terminated push/pull I/O

• 2.5V V_EXT, 1.35V V_DD, 1.2V V_DDQI/O

• Reduced cycle time (^tRC (MIN) = 8 - 12ns)

• SDR addressing

• Clock cycle and ^tRC timing

– 0.93ns and ^tRC (MIN) = 8ns

(RL3-2133)

-093E

-093

– 0.93ns and ^tRC (MIN) = 10ns

(RL3-2133)

– 1.07ns and ^tRC (MIN) = 8ns

(RL3-1866)

-107E

-107

– 1.07ns and ^tRC (MIN) = 10ns

(RL3-1866)

– 1.25ns and ^tRC (MIN) = 10ns

(RL3-1600)

-125E

-125

– 1.25ns and ^tRC (MIN) = 12ns

(RL3-1600)

• Programmable READ/WRITE latency (RL/WL) and

burst length

• Configuration

• Data mask for WRITE commands

• Differential input clocks (CK, CK#)

• Free-running differential input data clocks (DKx,

DKx#) and output data clocks (QKx, QKx#)

• On-die DLL generates CK edge-aligned data and

differential output data clock signals

• 64ms refresh (128K refresh per 64ms)

• 168-ball FBGA package

• 40Ω or 60Ω matched impedance outputs

• Integrated on-die termination (ODT)

• Single or multibank writes

• Extended operating range (200–1066 MHz)

• READ training register

– 32 Meg x 18

– 16 Meg x 36

• Operating temperature

– Commercial (T_C= 0° to +95°C)

– Industrial (T_C= –40°C to +95°C)

• Package

– 168-ball FBGA

– 168-ball FBGA (Pb-free)

• Revision

32M18

16M36

None

1. Not all options listed can be combined to

define an offered product. Use the part cat-

alog search on www.micron.com for availa-

ble offerings.

Note:

• Multiplexed and non-multiplexed addressing capa-

bilities

• Mirror function

• Output driver and ODT calibration

• JTAG interface (IEEE 1149.1-2001)

PDF: 09005aef84003617

576mb_rldram3.pdf – Rev. B 1/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by

Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications.

12 3 4 5 6 7...111

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与MT44K16M36相关器件

型号	品牌	获取价格	描述	数据表
MT44K16M36RB-093	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT44K16M36RB-093E IT	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT44K16M36RB-107	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT44K32M18	MICRON	获取价格	576Mb: x18, x36 RLDRAM 3
MT44K32M18RB-107	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT44K32M36RB-093E	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT44K32M36RB-107E	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT44K64M18RB-093E	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT44K64M18RB-107E	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT4516-101Y	BOURNS	获取价格	Low Impedance Chip Ferrite Beads

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