Datasheet > MT41K64M16TW-107 IT

MT41K64M16TW-107 IT

更新时间： 2024-10-01 17:00:39

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
215页	16514K
描述
DDR3 SDRAM

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1Gb: x4, x8, x16 DDR3L SDRAM

Description

DDR3L SDRAM

MT41K256M4 – 32 Meg x 4 x 8 banks

MT41K128M8 – 16 Meg x 8 x 8 banks

MT41K64M16 – 8 Meg x 16 x 8 banks

• Write leveling

• Multipurpose register

Description

The 1.35V DDR3L SDRAM device is a low-voltage ver-

sion of the 1.5V DDR3 SDRAM device. Refer to the

DDR3 (1.5V) SDRAM data sheet specifications when

running in 1.5V compatible mode.

• Output driver calibration

Options¹

• Configuration

Marking

– 256 Meg x 4

– 128 Meg x 8

– 64 Meg x 16

256M4

128M8

64M16

Features

• V_DD= V_DDQ= +1.35V (1.283V to 1.45V)

• Backward compatible to V_DD= V_DDQ= 1.5V ±0.075V

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• FBGA package (Pb-free) – x4, x8

– 78-ball FBGA (8mm x 11.5mm) Rev.

– 78-ball FBGA (8mm x 10.5mm) Rev. J

• FBGA package (Pb-free) – x16

– 96-ball FBGA (8mm x 14mm) Rev. G

– 96-ball FBGA (8mm x 14mm) Rev. J

• Timing – cycle time

– 1.07ns @ CL = 13 (DDR3-1866)

– 1.25ns @ CL = 11 (DDR3-1600)

– 1.5ns @ CL = 9 (DDR3-1333)

– 1.87ns @ CL = 7 (DDR3-1066)

• Operating temperature

– Commercial (0°C ≤ T_C≤ +95°C)

– Industrial (–40°C ≤ T_C≤ +95°C)

• Revision

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT)

for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

-107

-125

-15E

-187E

None

:G / :J

• T_Cof 95°C

– 64ms, 8192-cycle refresh up to 85°C

– 32ms, 8192-cycle refresh at >85°C to 95°C

• Self refresh temperature (SRT)

1. Not all options listed can be combined to

define an offered product. Use the part

catalog search on http://www.micron.com

for available offerings.

Note:

• Automatic self refresh (ASR)

Table 1: Key Timing Parameters

Speed Grade

-107^{1, 2, 3}

-125^{1, 2}

Data Rate (MT/s)

Target ^tRCD-^tRP-CL

^tRCD (ns)

13.91

13.75

13.5

^tRP (ns)

13.91

13.75

13.5

CL (ns)

13.91

13.75

13.5

1866

1600

1333

1066

13-13-13

11-11-11

9-9-9

-15E¹

187E

7-7-7

13.1

1. Backward compatible to 1066, CL = 7 (-187E).

2. Backward compatible to 1333, CL = 9 (-15E).

3. Backward compatible to 1600, CL = 11 (-125).

Notes:

PDF: CCMTD-1725822587-774

1Gb_DDR3L.pdf - Rev. L EN 9/18

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与MT41K64M16TW-107 IT相关器件

型号	品牌	获取价格	描述	数据表
MT41K64M16TW-107 XIT	MICRON	获取价格	MT41K128M8 – 16 Meg x 8 x 8 banks, MT41K64M16
MT4218-HR	MARKTECH	获取价格	Standar Standard T-1 3/4 LED Lamps
MT421A-Y	MARKTECH	获取价格	Visible LED, Diffused
MT4233-O	MARKTECH	获取价格	Standard 10mm LED Lamps
MT42C4256	AUSTIN	获取价格	256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
MT42C4256C-10/883C	AUSTIN	获取价格	256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
MT42C4256C-10/IT	AUSTIN	获取价格	256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
MT42C4256C-10/XT	AUSTIN	获取价格	256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
MT42C4256C-12/883	MICROSS	获取价格	Video DRAM
MT42C4256C-12/883C	AUSTIN	获取价格	256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM

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