Datasheet > MT41K64M16TW-107 AIT

MT41K64M16TW-107 AIT

更新时间： 2024-10-01 15:18:55

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
209页	3063K
描述
MT41K128M8 – 16 Meg x 8 x 8 banks, MT41K64M16 – 8 Meg x 16 x 8 banks

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1Gb: x8, x16 Automotive DDR3L SDRAM

Description

Automotive DDR3L SDRAM

MT41K128M8 – 16 Meg x 8 x 8 banks

MT41K64M16 – 8 Meg x 16 x 8 banks

• Write leveling

Description

• Multipurpose register

• Output driver calibration

• AEC-Q1±±

• PPAP submission

• 8D response time

The 1.35V DDR3L SDRAM device is a low-voltage ver-

sion of the 1.5V DDR3 SDRAM device. Refer to the

DDR3 (1.5V) SDRAM data sheet specifications when

running in 1.5V compatible mode.

Features

Options¹

Marking

• V_DD= V_DDQ= +1.35V (1.283V to 1.45V)

• Backward compatible to V_DD= V_DDQ= 1.5V ±±.±05V

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Configuration

– 128 Meg x 8

– 64 Meg x 16

128M8

64M16

• FBGA package (Pb-free) – x8

– 08-ball FBGA (8mm x 1±.5mm)

• FBGA package (Pb-free) – x16

– 96-ball FBGA (8mm x 14mm)

• Timing – cycle time

– 1.±0ns @ CL = 13 (DDR3-1866)

• Product certification

– Automotive

• Operating temperature

– Industrial (–4±°C T_C +95°C)

– Automotive (–4±°C T_C +1±5°C)

• Revision

• Differential clock inputs (CK, CK#)

• 8 internal banks

-1±0

• Nominal and dynamic on-die termination (ODT)

for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• T_Cof -4±°C to 1±5°C

– 64ms, 8192-cycle refresh at -4±°C to 85°C

– 32ms at 85°C to 1±5°C

• Self refresh temperature (SRT)

• Automatic self refresh (ASR)

1. Not all options listed can be combined to

define an offered product. Use the part

catalog search on http://www.micron.com

for available offerings.

Notes:

2. The datasheet does not support ×4 mode

even though ×4 mode description exists in

the following sections.

Table 1: Key Timing Parameters

Speed Grade

Data Rate (MT/s)

Target ^tRCD-^tRP-CL

^tRCD (ns)

^tRP (ns)

CL (ns)

-107

1866

13-13-13

13.91

Table 2: Addressing

Parameter

128 Meg x 8

16 Meg x 8 x 8 banks

64 Meg x 16

Configuration

Refresh count

8 Meg x 16 x 8 banks

PDF: 09005aef85e0b6f6

1Gb_automotive_DDR3L_F.pdf - Rev. C 5/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...209

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与MT41K64M16TW-107 AIT相关器件

型号	品牌	获取价格	描述	数据表
MT41K64M16TW-107 AUT	MICRON	获取价格	MT41K128M8 – 16 Meg x 8 x 8 banks, MT41K64M16
MT41K64M16TW-107 IT	MICRON	获取价格	DDR3 SDRAM
MT41K64M16TW-107 XIT	MICRON	获取价格	MT41K128M8 – 16 Meg x 8 x 8 banks, MT41K64M16
MT4218-HR	MARKTECH	获取价格	Standar Standard T-1 3/4 LED Lamps
MT421A-Y	MARKTECH	获取价格	Visible LED, Diffused
MT4233-O	MARKTECH	获取价格	Standard 10mm LED Lamps
MT42C4256	AUSTIN	获取价格	256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
MT42C4256C-10/883C	AUSTIN	获取价格	256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
MT42C4256C-10/IT	AUSTIN	获取价格	256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
MT42C4256C-10/XT	AUSTIN	获取价格	256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM

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