Datasheet > MT40A1G8SA-062E AAT

MT40A1G8SA-062E AAT

更新时间： 2024-11-19 15:18:43

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
373页	11121K
描述
MT40A1G8, MT40A512M16

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8Gb: x8, x16 Automotive DDR4 SDRAM

Features

Automotive DDR4 SDRAM

MT40A1G8

MT40A512M16

Features

s V_DD= V_DDQ= 1.2V ά60mV

s V_PPꢀ ꢁꢂꢃ6 nꢄꢁꢃM6ꢅꢆꢁꢃꢇM6

s On-die, internal, adjustable V_REFDQgeneration

s 1.2V pseudo open-drain I/O

s Refresh time of 8192-cycle at T_Ctemperature range:

n ꢈꢉMS AT nꢉꢇιC to 85ιC

Options¹

s Configuration

n 1 Gig x 8

n 512 Meg x 16

Marking

1G8

512M16

s ꢊꢋꢌBALL &"'! PACKAGE ꢍ0BꢌFREEꢎ n Xꢋ

n ꢋMM X ꢄꢁMM n 2EVꢂ "

n ꢊꢂꢃMM X ꢄꢄMM n 2EVꢂ %ꢏ 2

s ꢐꢈꢌBALL &"'! PACKAGE ꢍ0BꢌFREEꢎ n Xꢄꢈ

n ꢋMM X ꢄꢉMM n 2EVꢂ "

n ꢊꢂꢃMM X ꢄꢑꢂꢃMM n 2EVꢂ %

n ꢊꢂꢃMM X ꢄꢑMM n 2EVꢂ 2

s 4IMING n CYCLE TIME

n 0.625ns @ CL = 22 (DDR4-3200)

n 0.750ns @ CL = 18 (DDR4-2666)

n 0.833ns @ CL = 16 (DDR4-2400)

s Product certification

SA, AG

n 32ms at 85ιC to 95ιC

n 16ms at 95ιC to 105ιC

n 8ms at 105ιC to 125ιC

LY, AD

s 16 internal banks (x8): 4 groups of 4 banks each

s 8 internal banks (x16): 2 groups of 4 banks each

s 8n-bit prefetch architecture

s Programmable data strobe preambles

s Data strobe preamble training

s Command/Address latency (CAL)

s Multipurpose register read and write capability

s Write leveling

-062E

-075E

-083E

n Automotive

s Operating temperature

n )NDUSTRIAL ꢍnꢉꢇι ζ T_Cζ 95ιC)

n !UTOMOTIVE ꢍnꢉꢇι ζ T_Cζ 105ιC)

n 5LTRAꢌHIGH ꢍnꢉꢇι ζ T_Cζ 125ιC)³

s Revision

s Self refresh mode

s Low-power auto self refresh (LPASR)

s Temperature controlled refresh (TCR)

s Fine granularity refresh

:B, :E, :R

s Self refresh abort

s Maximum power saving

s Output driver calibration

s Nominal, park, and dynamic on-die termination

(ODT)

Notes: 1. Not all options listed can be combined to

define an offered product. Use the part

catalog search on http://www.micron.com for

available offerings.

2. Extended temperature mode during temperature

controlled refresh is not supported on 8Gb die

revision R. Refer to note 2 in table MR4 Definition.

3. The έ4 device is not offered and the mode is not

supported by the x8 or x16 device even though

some έ4 mode descriptions exist in the data sheet.

4. The UT option use based on automotive usage

model. Contact Micron sales representative if you

have questions.

s Data bus inversion (DBI) for data bus

s Command/Address (CA) parity

s Databus write cyclic redundancy check (CRC)

s Per-DRAM addressability

s Connectivity test

s JEDEC JESD-79-4 compliant²

s sPPR and hPPR capability

s MBIST-PPR support (die revision R only)

s AEC-Q100

s PPAP submission

5. -062E is only available for die Rev. E and die Rev. R.

CCMTD-1406124318-10419

8gb_auto_ddr4_dram.pdf - Rev. L 12/2023 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...373

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与MT40A1G8SA-062E AAT相关器件

型号	品牌	获取价格	描述	数据表
MT40A1G8SA-062E AIT	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A1G8SA-062E AUT	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A1G8SA-062E IT	MICRON	获取价格	8Gb: x4, x8, x16 DDR4 SDRAM
MT40A1G8SA-075	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A1G8WE-075E	MICRON	获取价格	Refresh time of 8192-cycle at TC temperature range
MT40A1G8WE-083E	MICRON	获取价格	Automotive DDR4 SDRAM
MT40A1G8WE-083E IT	MICRON	获取价格	8Gb: x4, x8, x16 DDR4 SDRAM
MT40A1G8WE-083EAAT	MICRON	获取价格	Automotive DDR4 SDRAM
MT40A1G8Z11BW	MICRON	获取价格	Adding ECC With DDR4 x16 Components
MT40A256M16GE-062E	MICRON	获取价格	4Gb: x4, x8, x16 DDR4 SDRAM

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