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MT40A1G16WBU-075E PDF预览

MT40A1G16WBU-075E

更新时间: 2024-11-19 01:11:39
品牌 Logo 应用领域
镁光 - MICRON 动态存储器双倍数据速率
页数 文件大小 规格书
19页 527K
描述
TwinDie 1.2V DDR4 SDRAM

MT40A1G16WBU-075E 数据手册

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16Gb: x16 TwinDie Single Rank DDR4 SDRAM  
Description  
TwinDie™ 1.2V DDR4 SDRAM  
MT40A1G16 – 64 Meg x 16 x 16 Banks x 1 Ranks  
Options  
• Configuration  
Marking  
Description  
The 16Gb (TwinDie™) DDR4 SDRAM uses  
Micron’s 8Gb DDR4 SDRAM die; two x8s combined to  
make one x16. Similar signals as mono x16, there is  
one extra ZQ connection for faster ZQ Calibration and  
a BG1 control required for x8 addressing. Refer to Mi-  
cron’s 8Gb DDR4 SDRAM data sheet (x8 option) for  
the specifications not included in this document.  
Specifications for base part number MT40A1G8 corre-  
late to TwinDie manufacturing part number  
MT40A1G16.  
– 64 Meg x 16 x 16 banks x 1 rank  
• 96-ball FBGA package (Pb-free)  
– 9.5mm x 14mm x 1.2mm Die Rev :A  
– 8.0mm x 14mm x 1.2mm Die Rev :B,  
D
1G16  
HBA  
WBU  
– 7.5mm x 13.5mm x 1.2mm Die  
Rev :H  
KNR  
• Timing – cycle time1  
– 0.682ns @ CL = 20 (DDR4-2933)  
– 0.682ns @ CL = 21 (DDR4-2933)  
– 0.750ns @ CL = 18 (DDR4-2666)  
– 0.750ns @ CL = 19 (DDR4-2666)  
– 0.833ns @ CL = 16 (DDR4-2400)  
– 0.833ns @ CL = 17 (DDR4-2400)  
– 0.937ns @ CL = 15 (DDR4-2133)  
– 0.937ns @ CL = 16 (DDR4-2133)  
– 1.071ns @ CL = 13 (DDR4-1866)  
• Self refresh  
-068E  
-068  
-075E  
-075  
-083E  
-083  
-093E  
-093  
Features  
• Uses two x8 8Gb Micron die to make one x16  
• Single rank TwinDie  
• VDD = VDDQ = 1.2V (1.14–1.26V)  
• 1.2V VDDQ-terminated I/O  
• JEDEC-standard ball-out  
• Low-profile package  
• TC of 0°C to 95°C  
– 0°C to 85°C: 8192 refresh cycles in 64ms  
– 85°C to 95°C: 8192 refresh cycles in 32ms  
-107E  
– Standard  
None  
• Operating temperature  
– Commercial (0°C TC 95°C)  
• Revision  
None  
:A  
:B, D  
:H  
1. CL = CAS (READ) latency.  
Note:  
Table 1: Key Timing Parameters  
Speed Grade  
-068E1  
-0681  
Data Rate (MT/s)  
Target tRCD-tRP-CL  
tRCD (ns)  
13.64  
14.32  
13.5  
tRP (ns)  
13.64  
14.32  
13.5  
CL (ns)  
13.64  
14.32  
13.5  
2933  
2933  
2666  
2666  
2400  
2400  
2133  
2133  
1866  
20-20-20  
21-21-21  
18-18-18  
19-19-19  
16-16-16  
17-17-17  
15-15-15  
16-16-16  
13-13-13  
-075E2  
-0752  
-083E3  
-0833  
-093E4  
-0934  
-107E5  
14.25  
13.32  
14.16  
14.06  
15  
14.25  
13.32  
14.16  
14.06  
15  
14.25  
13.32  
14.16  
14.06  
15  
13.92  
13.92  
13.92  
1. Backward compatible to 1600, CL = 11; 1866, CL = 13; 2133, CL = 15; 2400, CL = 17; and 2666, CL = 19.  
2. Backward compatible to 1600, CL = 11; 1866, CL = 13; 2133, CL = 15; and 2400, CL = 17.  
Notes:  
09005aef86573aa8  
DDR4_16Gb_x16_1CS_TwinDie.pdf - Rev. E 12/16 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2015 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

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