Datasheet > MT40A1G16RC-062E IT

MT40A1G16RC-062E IT

更新时间： 2024-11-19 17:00:23

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
372页	13728K
描述
16Gb: x4, x8, x16 DDR4 SDRAM, MT40A4G4SA-062E

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16Gb: x4, x8, x16 DDR4 SDRAM

Features

DDR4 SDRAM

MT40A4G4

MT40A2G8

MT40A1G16

s Connectivity test

s JEDEC JESD-79-4 compliant

s sPPR and hPPR capability

s MBIST-PPR support (Die Revision F only)

Features

s V_DD= V_DDQ= 1.2V ά60mV

s V_PPꢀ ꢁꢂꢃ6ꢄ nꢅꢁꢃM6ꢄ ꢆꢁꢃꢇM6

s On-die, internal, adjustable V_REFDQgeneration

s 1.2V pseudo open-drain I/O

Options¹

s Configuration

n 4 Gig x 4

n 2 Gig x 8

Marking

s T_Cmaximum up to 95ιC

n 64ms, 8192-cycle refresh up to 85ιC

n 32ms, 8192-cycle refresh at >85ιC to 95ιC

s 16 internal banks (x4, x8): 4 groups of 4 banks each

s 8 internal banks (x16): 2 groups of 4 banks each

s 8n-bit prefetch architecture

s Programmable data strobe preambles

s Data strobe preamble training

s Command/Address latency (CAL)

s Multipurpose register READ and WRITE capability

s Write leveling

4G4

2G8

1G16

n 1 Gig x 16

s ꢈꢉꢊBALL &"'! PACKAGE ꢋ0BꢊFREEꢌ n Xꢍꢄ Xꢉ

n ꢅꢇMM X ꢅꢅMM n 2EVꢂ "

n ꢎMM X ꢅꢅMM n 2EVꢂ %

n ꢈꢂꢃMM X ꢅꢅMM n 2EVꢂ &

s ꢎꢏꢊBALL &"'! PACKAGE ꢋ0BꢊFREEꢌ n Xꢅꢏ

n ꢅꢇMM X ꢅꢐMM n 2EVꢂ "

n ꢎMM X ꢅꢐMM n 2EVꢂ %

n ꢈꢂꢃMM X ꢅꢐMM n 2EVꢂ &

s 4IMING n CYCLE TIME

n 0.625ns @ CL = 22 (DDR4-3200)

n 0.682ns @ CL = 21 (DDR4-2933)

s Operating temperature

n Commercial (0ι ζ T_Cζ 95ιC)

n )NDUSTRIAL ꢋnꢍꢇι ζ T_Cζ 95ιC)

s Die Revision

s Self refresh mode

s Low-power auto self refresh (LPASR)

s Temperature controlled refresh (TCR)

s Fine granularity refresh

s Self refresh abort

s Maximum power saving

s Output driver calibration

s Nominal, park, and dynamic on-die termination

(ODT)

s Data bus inversion (DBI) for data bus

s Command/Address (CA) parity

s Databus write cyclic redundancy check (CRC)

s Per-DRAM addressability

-062E

-068

None

:B, :E, :F

Notes: 1. Not all options listed can be combined to

define an offered product. Use the part

catalog search on http://www.micron.com for

available offerings.

Table 1: Key Timing Parameters

Speed Grade¹

-062E

Data Rate (MT/s)

Target CL-nRCD-nRP

22-22-22

^tAA (ns)

13.75

^tRCD (ns)

13.75

^tRP (ns)

13.75

3200

2933

-068

21-21-21

14.32 (13.75)

Notes: 1. Refer to the Speed Bin Tables for additional details.

CCM005-1406124318-10453

16gb_ddr4_dram.pdf - Rev. H 8/2021 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与MT40A1G16RC-062E IT相关器件

型号	品牌	获取价格	描述	数据表
MT40A1G16TB-062E	MICRON	获取价格	16Gb: x4, x8, x16 DDR4 SDRAM, MT40A4G4SA-062E
MT40A1G16TB-062E IT	MICRON	获取价格	16Gb: x4, x8, x16 DDR4 SDRAM, MT40A4G4SA-062E
MT40A1G16TD-062E AAT	MICRON	获取价格	MT40A2G8AD, MT40A1G16TD
MT40A1G16TD-062E AIT	MICRON	获取价格	MT40A2G8AD, MT40A1G16TD
MT40A1G16TD-062E AUT	MICRON	获取价格	MT40A2G8AD, MT40A1G16TD
MT40A1G16WBU-075E	MICRON	获取价格	TwinDie 1.2V DDR4 SDRAM
MT40A1G16WBU-083E	MICRON	获取价格	TwinDie 1.2V DDR4 SDRAM
MT40A1G4HX-083E	MICRON	获取价格	4Gb: x4, x8, x16 DDR4 SDRAM
MT40A1G4HX-093E	MICRON	获取价格	4Gb: x4, x8, x16 DDR4 SDRAM
MT40A1G4RH-075E	MICRON	获取价格	Programmable data strobe preambles

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