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MT36VDDF25672G-202 PDF预览

MT36VDDF25672G-202

更新时间: 2024-11-20 00:41:55
品牌 Logo 应用领域
镁光 - MICRON 时钟动态存储器双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
20页 444K
描述
DDR SDRAM RDIMM

MT36VDDF25672G-202 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DIMM, DIMM184Reach Compliance Code:unknown
风险等级:5.92最长访问时间:0.8 ns
最大时钟频率 (fCLK):125 MHzI/O 类型:COMMON
JESD-30 代码:R-PDMA-N184内存密度:19327352832 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:72
端子数量:184字数:268435456 words
字数代码:256000000最高工作温度:70 °C
最低工作温度:组织:256MX72
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIMM封装等效代码:DIMM184
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
电源:2.5 V认证状态:Not Qualified
刷新周期:8192最大待机电流:0.18 A
子类别:DRAMs标称供电电压 (Vsup):2.5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL

MT36VDDF25672G-202 数据手册

 浏览型号MT36VDDF25672G-202的Datasheet PDF文件第2页浏览型号MT36VDDF25672G-202的Datasheet PDF文件第3页浏览型号MT36VDDF25672G-202的Datasheet PDF文件第4页浏览型号MT36VDDF25672G-202的Datasheet PDF文件第5页浏览型号MT36VDDF25672G-202的Datasheet PDF文件第6页浏览型号MT36VDDF25672G-202的Datasheet PDF文件第7页 
1GB, 2GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM  
Fe a t u re s  
DDR SDRAM RDIMM  
MT36VDDF12872 – 1GB  
MT36VDDF25672 – 2GB  
For component data sheets, refer to Microns Web site: www.micron.com  
Fig u re 2:  
St a n d a rd -He ig h t La yo u t – 1GB  
(MO-206-CA R/C D)  
Fe a t u re s  
• 184-pin, registered dual in-line memory module  
(RDIMM)  
PCB height: 30.48mm (1.2in)  
• Tall- and standard-height PCB options  
• Fast data transfer rates: PC2100, PC2700, or PC3200  
• 1GB (128 Meg x 72) and 2GB (256 Meg x 72)  
• Supports ECC error detection and correction  
• VDD = VDDQ = +2.5V  
(-40B VDD = VDDQ = +2.6V)  
• VDDSPD = +2.3V to +3.6V  
Fig u re 3:  
St a n d a rd -He ig h t La yo u t – 2GB  
(MO-206-CA R/C D)  
• 2.5V I/ O (SSTL_2-compatible)  
• Internal, pipelined double data rate (DDR)  
2n-prefetch architecture  
PCB height: 30.48mm (1.2in)  
• Bidirectional data strobe (DQS) transmitted/  
received with data—that is, source-synchronous  
data capture  
• Differential clock inputs (CK and CK#)  
• Multiple internal device banks for concurrent  
operation  
• Dual rank  
• Selectable burst lengths (BL): 2, 4, or 8  
Auto precharge option  
Op t io n s  
• Operating temperature  
Ma rkin g  
1
Commercial (0°C T +70°C)  
None  
I
Auto refresh and self refresh modes: 7.8125µs  
maximum average periodic refresh interval  
• Serial presence-detect (SPD) with EEPROM  
• Selectable CAS latency (CL) for maximum  
compatibility  
A
Industrial (–40°C T +85°C)  
A
• Package  
184-pin DIMM (standard)  
184-pin DIMM (Pb-free)  
• Memory clock, speed, CAS latency  
G
Y
2
• Gold edge contacts  
5.0ns (200 MHz), 400 MT/ s, CL = 3  
6.0ns (166 MHz), 333 MT/ s, CL = 2.5  
7.5ns (133 MHz), 266 MT/ s, CL = 2  
7.5ns (133 MHz), 266 MT/ s, CL = 2  
7.5ns (133 MHz), 266 MT/ s, CL = 2.5  
-40B  
-335  
-262  
-26A  
-265  
184-Pin RDIMM Fig u re s  
Fig u re 1:  
Ta ll-He ig h t La yo u t – 1GB, 2GB  
(MO-206-EA)  
Notes: 1. Contact Micron for industrial temperature  
module offerings.  
PCB height: 43.18mm (1.7in)  
2. CL = CAS (READ) latency; registered mode  
adds one clock cycle to CL.  
PDF: 09005aef80772fd2/Source: 09005aef8075ebf6  
DDF36C128_256x72.fm - Rev. G 9/08 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2002 Micron Technology, Inc. All rights reserved.  
1
Products and specifications discussed herein are subject to change by Micron without notice.  

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