Datasheet > MT36VDDF12872Y-202

MT36VDDF12872Y-202

更新时间： 2024-11-24 00:41:55

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
20页	444K
描述
DDR SDRAM RDIMM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MT36VDDF12872Y-202 数据手册

浏览型号MT36VDDF12872Y-202的Datasheet PDF文件第2页

浏览型号MT36VDDF12872Y-202的Datasheet PDF文件第3页

浏览型号MT36VDDF12872Y-202的Datasheet PDF文件第4页

浏览型号MT36VDDF12872Y-202的Datasheet PDF文件第5页

浏览型号MT36VDDF12872Y-202的Datasheet PDF文件第6页

浏览型号MT36VDDF12872Y-202的Datasheet PDF文件第7页

1GB, 2GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM

Fe a t u re s

DDR SDRAM RDIMM

MT36VDDF12872 – 1GB

MT36VDDF25672 – 2GB

For component data sheets, refer to Micron’s Web site: www.micron.com

Fig u re 2:

St a n d a rd -He ig h t La yo u t – 1GB

(MO-206-CA R/C D)

Fe a t u re s

• 184-pin, registered dual in-line memory module

(RDIMM)

PCB height: 30.48mm (1.2in)

• Tall- and standard-height PCB options

• Fast data transfer rates: PC2100, PC2700, or PC3200

• 1GB (128 Meg x 72) and 2GB (256 Meg x 72)

• Supports ECC error detection and correction

• VDD = VDDQ = +2.5V

(-40B VDD = VDDQ = +2.6V)

• VDDSPD = +2.3V to +3.6V

Fig u re 3:

St a n d a rd -He ig h t La yo u t – 2GB

(MO-206-CA R/C D)

• 2.5V I/ O (SSTL_2-compatible)

• Internal, pipelined double data rate (DDR)

2n-prefetch architecture

PCB height: 30.48mm (1.2in)

• Bidirectional data strobe (DQS) transmitted/

received with data—that is, source-synchronous

data capture

• Differential clock inputs (CK and CK#)

• Multiple internal device banks for concurrent

operation

• Dual rank

• Selectable burst lengths (BL): 2, 4, or 8

• Auto precharge option

Op t io n s

• Operating temperature

Ma rkin g

– Commercial (0°C ≤ T ≤ +70°C)

None

• Auto refresh and self refresh modes: 7.8125µs

maximum average periodic refresh interval

• Serial presence-detect (SPD) with EEPROM

• Selectable CAS latency (CL) for maximum

compatibility

– Industrial (–40°C ≤ T ≤ +85°C)

• Package

– 184-pin DIMM (standard)

– 184-pin DIMM (Pb-free)

• Memory clock, speed, CAS latency

• Gold edge contacts

– 5.0ns (200 MHz), 400 MT/ s, CL = 3

– 6.0ns (166 MHz), 333 MT/ s, CL = 2.5

– 7.5ns (133 MHz), 266 MT/ s, CL = 2

– 7.5ns (133 MHz), 266 MT/ s, CL = 2.5

-40B

-335

-262

-26A

-265

184-Pin RDIMM Fig u re s

Fig u re 1:

Ta ll-He ig h t La yo u t – 1GB, 2GB

(MO-206-EA)

Notes: 1. Contact Micron for industrial temperature

module offerings.

PCB height: 43.18mm (1.7in)

2. CL = CAS (READ) latency; registered mode

adds one clock cycle to CL.

PDF: 09005aef80772fd2/Source: 09005aef8075ebf6

DDF36C128_256x72.fm - Rev. G 9/08 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...20

中文翻译

下载PDF

与MT36VDDF12872Y-202相关器件

型号	品牌	获取价格	描述	数据表
MT36VDDF12872Y-262	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDF12872Y-265	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDF12872Y-26A	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDF12872Y-335	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDF12872Y-40B	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDF25672	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDF25672G-202	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDF25672G-262	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDF25672G-265	MICRON	获取价格	DDR SDRAM RDIMM
MT36VDDF25672G-26A	MICRON	获取价格	DDR SDRAM RDIMM

与MT36VDDF12872Y-202相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

MT36VDDF12872Y-202

MT36VDDF12872Y-202 数据手册

与MT36VDDF12872Y-202相关器件

与MT36VDDF12872Y-202相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MT36VDDF12872Y-202

MT36VDDF12872Y-202 数据手册

与MT36VDDF12872Y-202相关器件

与MT36VDDF12872Y-202相关文章

您还可以找

您在本页遇到什么问题？