Datasheet > MT36RTF51272FZ-667

MT36RTF51272FZ-667

更新时间： 2024-11-20 15:18:59

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镁光 - MICRON		/
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4GB (x72, DR) 240-Pin DDR2 SDRAM 1.55V FBDIMM

Features

1.55V DDR2 FBDIMM

MT36RTF51272FZ – 4GB

Figure 1: 240-Pin FBDIMM (MO-256 R/C E)

Features

240-pin, fully buffered DIMM (FBDIMM)

Very low power DDR2 operation

•

Module height: 30.35mm (1.19in)

• 1.5V ≤ V_DD≤ 1.9V for DDR2 SDRAM

• 1.5V ≤ V_DD≤ 1.9V for advanced memory buffer

(AMB) DRAM I/O

V_DD= 1.55V

•

Backward compatible with systems designed for the

standard (1.8V) FBDIMM

Options

Marking

Package

•

Dual rank

240-pin DIMM (halogen-free)

•

–

Frequency/CL¹

•

Component configuration: 256 Meg x 4

3.0ns @ CL = 5 (DDR2-667)

-667

–

Functionality

1. CL = CAS (READ) latency.

Note:

This 1.55V FBDIMM consumes less power than a stand-

ard 1.8V FBDIMM. However, it has the same timing

and operating parameters as a standard FBDIMM.

This enables backward compatibility with systems de-

signed for use with standard FBDIMMs.

Information in the 1.8V DDR2 FBDIMM data sheet is

directly applicable to this 1.55V DDR2 FBDIMM, ex-

cept where stated otherwise in this data sheet.

Table 1: Key Timing Parameters

Data Rate (MT/s)

Speed

Grade

Industry

Nomenclature

^tRCD

(ns)

^tRP

(ns)

^tRC

(ns)

CL = 5

667

–

CL = 4

553

CL = 3

400

-667

-53E

PC2-5300

PC2-4200

553

400

PDF: 09005aef840d5a4c

rtf36c512x72fz.pdf - Rev. A 06/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...9

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