Datasheet > MT36LSDT12872G

MT36LSDT12872G

更新时间： 2024-02-04 00:24:30

品牌	Logo	应用领域
镁光 - MICRON		动态存储器
页数	文件大小	规格书
30页	1002K
描述
Synchronous DRAM Module

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中文翻译

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数据手册

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MT36LSDT12872G 数据手册

1GB, 2GB: (x72, ECC, DR) 168-Pin SDRAM RDIMM

Fe a t u re s

Syn ch ro n o u s DRAM Mo d u le

MT36LSDT12872 – 1GB

MT36LSDT25672 – 2GB

For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/modules

Fig u re 1:

168-Pin DIMM (MO-161)

Fe a t u re s

• 168-pin, dual in-line memory module (DIMM)

• PC100- and PC133-compliant

Standard 1.70in. (43.18mm)

• Registered inputs with one-clock delay

• Phase-lock loop (PLL) clock driver to reduce loading

• Utilizes 125 MHz and 133 MHz SDRAM

components

• Supports ECC error detection and correction

• 1GB (128 Meg x 72) and 2GB (256 Meg x 72)

• Single +3.3V power supply

Low-Profile 1.20in. (30.48mm)

• Fully synchronous; all signals registered on positive

edge of PLL clock

• Internal pipelined operation; column address can

be changed every clock cycle

• Internal SDRAM banks for hiding row access/

precharge

• Programmable burst lengths: 1, 2, 4, 8, or full page

• Auto precharge, includes concurrent auto precharge

• Auto refresh mode

• Self refresh mode: 64ms, 4,096-cycle refresh

• LVTTL-compatible inputs and outputs

• Serial presence-detect (SPD)

Op t io n s

• Package

168-pin DIMM (standard)

168-pin DIMM (lead-free)

• Frequency/ CAS Latency²

133 MHz/ CL = 2

Ma rkin g

-13E

-133

• Gold edge contacts

133 MHz/ CL = 3

• PCB

Ta b le 1:

Tim in g Pa ra m e t e rs

Standard 1.70in (43.18mm)

See note on page 2

CL = CAS (READ) latency

Low-Profile 1.20in. (30.48mm) See note on page 2

Acce ss Tim e

Mo d u le

Ma rkin g

Se t u p

Ho ld

Tim e

Notes: 1. Contact Micron for product availability.

2. Registered mode adds one clock cycle to CL.

Clo ck

CL = 2 CL = 3 Tim e

-13E

-133

133 MHz

5.4ns

–

1.5

0.8

5.4ns

Ta b le 2:

Ad d re ss Ta b le

Pa ra m e t e r

1GB

2GB

Refresh Count

Device Banks

4 (BA0, BA1)

256Mb (64 Meg x 4)

8K (A0–A12)

512Mb (128 Meg x 4)

8K (A0–A12)

Device Configuration

Row Addressing

2K (A0–A9, A11)

4K (A0–A9, A11, A12)

2 (S0#, S2#; S1#, S3#)

Column Addressing

Module Ranks

2 (S0#, S2#; S1#, S3#)

PDF: 09005aef80b1835d/Source: 09005aef80b18348

SD36C128_256x72G.fm - Rev. E 6/05 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...30

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与MT36LSDT12872G相关器件

型号	品牌	获取价格	描述	数据表
MT36LSDT12872G-133	MICRON	获取价格	Synchronous DRAM Module
MT36LSDT12872Y-133	MICRON	获取价格	Synchronous DRAM Module
MT36LSDT12872Y-13E	MICRON	获取价格	Synchronous DRAM Module
MT36LSDT25672	MICRON	获取价格	Synchronous DRAM Module
MT36LSDT25672G	MICRON	获取价格	Synchronous DRAM Module
MT36LSDT25672G-133	MICRON	获取价格	Synchronous DRAM Module
MT36LSDT25672G-13E	MICRON	获取价格	Synchronous DRAM Module
MT36LSDT25672Y-133	MICRON	获取价格	Synchronous DRAM Module
MT36LSDT25672Y-13E	MICRON	获取价格	Synchronous DRAM Module
MT36RTF51272FZ-667	MICRON	获取价格

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