Datasheet > MT29GZ6A6BPIET-53AIT

MT29GZ6A6BPIET-53AIT

更新时间： 2024-09-15 17:00:35

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
398页	10993K
描述
MT29GZ6A6BPIET-53AIT.112, MT29GZ6A6BPIET-53AAT.112, MT29GZ6A6BPIET-046AIT.112, MT29GZ6A6BPIET-046AAT.112

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Micron Confidential and Proprietary

149-Ball NAND Flash with LPDDR4/LPDDR4X MCP

Features

NAND Flash with Mobile LPDDR4/

LPDDR4X 149-Ball MCP

MT29GZ6A6BPIET-53AIT.112, MT29GZ6A6BPIET-53AAT.112,

MT29GZ6A6BPIET-046AIT.112, MT29GZ6A6BPIET-046AAT.112

Figure 1: MCP Block Diagram

Features

• Micron^®NAND Flash and LPDDR4/LPDDR4X compo-

nents

• RoHS-compliant, “green” package

• Separate NAND Flash and LPDDR4/LPDDR4X interfa-

ces

NAND Flash

Device

NAND Flash

Interface

NAND Flash

Power

• Space-saving multichip package (MCP)

• Low-voltage operation

• Industrial temperature range: –40°C to +85°C

• Automotive temperature range: –40°C to +105°C

• AEC-Q100

LPDRAM

Device

LPDRAM

Interface

LPDRAM Power

NAND Flash-Specific Features

• Organization

– Page size x8: 4352 bytes (4096 + 256 bytes)

– Block size: 64 pages

– Number of planes: 1

Mobile LPDDR4/LPDDR4X-Specific Fea-

tures (Continued)

• V_CC= 1.70–1.95V; 1.80V nominal

• Programmable READ and WRITE latencies (RL/WL)

• Programmable and on-the-fly burst lengths (BL =

16, 32)

• Directed per-bank refresh for concurrent bank op-

eration and ease of command scheduling

• On-chip temperature sensor to control self refresh

rate

• Partial-array self refresh (PASR)

• Selectable output drive strength (DS)

• Programmable V_SS(ODT) termination

Mobile LPDDR4/LPDDR4X-Specific Fea-

tures

• Ultra-low-voltage core and I/O power supply

– V_DD1= 1.70–1.95V; 1.80V nominal

– V_DD2= 1.06–1.17V; 1.1V nominal

– V_DDQ= 1.06–1.17V; 1.10V nominal

or Low V_DDQ= 0.57–0.65V; 0.60V nominal

• Frequency range

– 2133–10 MHz (data rate range: 4266–20 Mb/s/

pin)

• 16n prefetch DDR architecture

• 8 internal banks per channel for concurrent opera-

tion

1. For physical part markings, see Part Num-

bering Information.

Note:

• Single-data-rate CMD/ADR entry

• Bidirectional/differential data strobe per byte lane

CCM005-284460984-10497

149ball_nand_lpddr4_lpddr4x_nm112_auto.pdf – Rev. B 3/2020 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与MT29GZ6A6BPIET-53AIT相关器件

型号	品牌	获取价格	描述	数据表
MT29GZ6A6BPIET-53IT	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT29RZ1C1CZZHGTN-18I	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT29RZ1CVCZZHGTN-18 I	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT29RZ4B2DZZHHTB-18I	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT29RZ4B2DZZHHTB-18W	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT29RZ4B2DZZHHWD-18I	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT29RZ4B4DZZMGWD-18I	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT29V5D7GVESL-046I	MICRON	获取价格	MT29VZZZ5D7GVESL-046I.216
MT29VZZZ5D8JQFSL-053	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT29VZZZ7D8FQFSL-046 W	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard

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