型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MT29F8G16ADADAH4-IT | MICRON |
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This tech note describes considerations in thermal applications for Micron memory devices, | |
MT29F8G16ADBDAH4 | MICRON |
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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features | |
MT29F8G16ADBDAH4-AIT | MICRON |
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This tech note describes considerations in thermal applications for Micron memory devices, | |
MT29F8T08EULCHD5-R | MICRON |
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Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard | |
MT29F8T08EULCHD5-T | MICRON |
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Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard | |
MT29F8T08EWHAFJ6-3R | MICRON |
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Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard | |
MT29F8T08EWHAFJ6-3T | MICRON |
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Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard | |
MT29F8T08EWLEEM5-R | MICRON |
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Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard | |
MT29F8T08EWLEEM5-T | MICRON |
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Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard | |
MT29GZ5A3BPGGA-046IT | MICRON |
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MT29GZ5A3BPGGA-53IT.87K, MT29GZ5A3BPGGA-046IT.87K |