品牌 | Logo | 应用领域 |
镁光 - MICRON | / | |
页数 | 文件大小 | 规格书 |
132页 | 1301K | |
描述 | ||
This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics. |
是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | TSOP1, TSSOP48,.8,20 | Reach Compliance Code: | compliant |
风险等级: | 5.69 | 命令用户界面: | YES |
JESD-30 代码: | R-PDSO-G48 | 长度: | 18.4 mm |
内存密度: | 8589934592 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
部门数/规模: | 4K | 端子数量: | 48 |
字数: | 536870912 words | 字数代码: | 512000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 512MX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP1 | 封装等效代码: | TSSOP48,.8,20 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
页面大小: | 2K words | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 编程电压: | 3.3 V |
就绪/忙碌: | YES | 座面最大高度: | 1.2 mm |
部门规模: | 128K | 最大待机电流: | 0.0001 A |
最大压摆率: | 0.035 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 类型: | SLC NAND TYPE |
宽度: | 12 mm | Base Number Matches: | 1 |
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