Datasheet > MT29F8G08ADADAH4D

MT29F8G08ADADAH4D

更新时间： 2024-09-08 12:02:59

品牌	Logo	应用领域
镁光 - MICRON		闪存
页数	文件大小	规格书
132页	1301K
描述
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MT29F8G08ADADAH4D 数据手册

浏览型号MT29F8G08ADADAH4D的Datasheet PDF文件第2页

浏览型号MT29F8G08ADADAH4D的Datasheet PDF文件第3页

浏览型号MT29F8G08ADADAH4D的Datasheet PDF文件第4页

浏览型号MT29F8G08ADADAH4D的Datasheet PDF文件第5页

浏览型号MT29F8G08ADADAH4D的Datasheet PDF文件第6页

浏览型号MT29F8G08ADADAH4D的Datasheet PDF文件第7页

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

NAND Flash Memory

MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,

MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,

MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,

MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,

MT29F16G08AJADAWP

• First block (block address 00h) is valid when ship-

ped from factory with ECC. For minimum required

ECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-

cles are less than 1000

Features

• Open NAND Flash Interface (ONFI) 1.0-compliant¹

• Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 2048 blocks per plane

– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks

16Gb: 16,384 blocks

• RESET (FFh) required as first command after pow-

er-on

• Alternate method of device initialization (Nand_In-

it) after power up (contact factory)

• Internal data move operations supported within the

plane from which data is read

• Quality and reliability

– Data retention: 10 years

– Endurance: 100,000 PROGRAM/ERASE cycles

• Operating voltage range

• Asynchronous I/O performance

–

^tRC/^tWC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs ³

– Program page: 200µs (TYP: 1.8V, 3.3V)³

– Erase block: 700µs (TYP)

– V_CC: 2.7–3.6V

– V_CC: 1.7–1.95V

• Operating temperature:

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Commercial: 0°C to +70°C

– Industrial (IT): –40ºC to +85ºC

• Package

– Program page cache mode⁴

– Read page cache mode ⁴

– 48-pin TSOP type 1, CPL²

– 63-ball VFBGA

– One-time programmable (OTP) mode

– Two-plane commands ⁴

– Interleaved die (LUN) operations

– Read unique ID

– Block lock (1.8V only)

– Internal data move

• Operation status byte provides software method for

detecting

1. The ONFI 1.0 specification is available at

www.onfi.org.

Notes:

2. CPL = Center parting line.

3. See Program and Erase Characteristics for

^tR_ECC and ^tPROG_ECC specifications.

4. These commands supported only with ECC

disabled.

– Operation completion

– Pass/fail condition

– Write-protect status

• Ready/Busy# (R/B#) signal provides a hardware

method of detecting operation completion

• WP# signal: Write protect entire device

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...132

中文翻译

下载PDF

与MT29F8G08ADADAH4D相关器件

型号	品牌	获取价格	描述	数据表
MT29F8G08ADADAH4-IT	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F8G08ADAFAH4-AAT	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F8G08ADAFAWP-AAT	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F8G08ADAFAWP-AIT	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F8G08ADBDAH4	MICRON	获取价格	4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
MT29F8G08ADBDAH4-AAT	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F8G08ADBDAH4-IT	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F8G08ADBFAH4-AAT	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F8G08DAAWCA	MICRON	获取价格	4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
MT29F8G16ABACAWP-IT	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,

与MT29F8G08ADADAH4D相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

56
AIC1781A 电池充电控制器深度解析
2024-09-03

48
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

81
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

92

产品中心

服务支持

精选活动

关于我们

帮助中心

MT29F8G08ADADAH4D

MT29F8G08ADADAH4D 数据手册

与MT29F8G08ADADAH4D相关器件

与MT29F8G08ADADAH4D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MT29F8G08ADADAH4D

MT29F8G08ADADAH4D 数据手册

与MT29F8G08ADADAH4D相关器件

与MT29F8G08ADADAH4D相关文章

您还可以找

您在本页遇到什么问题？