是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
Factory Lead Time: | 16 weeks | 风险等级: | 1.61 |
最长访问时间: | 25 ns | 命令用户界面: | YES |
数据轮询: | NO | JESD-30 代码: | R-PBGA-B63 |
JESD-609代码: | e1 | 长度: | 11 mm |
内存密度: | 4294967296 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
部门数/规模: | 4K | 端子数量: | 63 |
字数: | 268435456 words | 字数代码: | 256000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 256MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VFBGA |
封装等效代码: | BGA63,10X12,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 页面大小: | 1K words |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
电源: | 1.8 V | 编程电压: | 1.8 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
座面最大高度: | 1 mm | 部门规模: | 64K |
最大待机电流: | 0.00005 A | 子类别: | Flash Memories |
最大压摆率: | 0.02 mA | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 30 |
切换位: | NO | 类型: | SLC NAND TYPE |
宽度: | 9 mm | Base Number Matches: | 1 |
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MT29F4T08EUHBFM4-T | MICRON |
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