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MT29F4G08ABADAWP

更新时间： 2024-01-12 16:01:49
品牌 Logo 应用领域
镁光 - MICRON 闪存
页数 文件大小 规格书
132页 1301K
描述
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features

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MT29F4G08ABADAWP 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TSOP1
包装说明：TSOP1,针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.53
JESD-30 代码：R-PDSO-G48JESD-609代码：e3
长度：18.4 mm内存密度：4294967296 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1端子数量：48
字数：536870912 words字数代码：512000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512MX8
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
类型：SLC NAND TYPE宽度：12 mm
Base Number Matches：1

MT29F4G08ABADAWP 数据手册

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Micron Confidential and Proprietary  
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory  
Features  
NAND Flash Memory  
MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,  
MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,  
MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,  
MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,  
MT29F16G08AJADAWP  
• First block (block address 00h) is valid when ship-  
ped from factory with ECC. For minimum required  
ECC, see Error Management.  
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-  
cles are less than 1000  
Features  
• Open NAND Flash Interface (ONFI) 1.0-compliant1  
• Single-level cell (SLC) technology  
• Organization  
– Page size x8: 2112 bytes (2048 + 64 bytes)  
– Page size x16: 1056 words (1024 + 32 words)  
– Block size: 64 pages (128K + 4K bytes)  
– Plane size: 2 planes x 2048 blocks per plane  
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks  
16Gb: 16,384 blocks  
• RESET (FFh) required as first command after pow-  
er-on  
• Alternate method of device initialization (Nand_In-  
it) after power up (contact factory)  
• Internal data move operations supported within the  
plane from which data is read  
• Quality and reliability  
– Data retention: 10 years  
– Endurance: 100,000 PROGRAM/ERASE cycles  
• Operating voltage range  
• Asynchronous I/O performance  
–
tRC/tWC: 20ns (3.3V), 25ns (1.8V)  
• Array performance  
– Read page: 25µs 3  
– Program page: 200µs (TYP: 1.8V, 3.3V)3  
– Erase block: 700µs (TYP)  
– VCC: 2.7–3.6V  
– VCC: 1.7–1.95V  
• Operating temperature:  
• Command set: ONFI NAND Flash Protocol  
• Advanced command set  
– Commercial: 0°C to +70°C  
– Industrial (IT): –40ºC to +85ºC  
• Package  
– Program page cache mode4  
– Read page cache mode 4  
– 48-pin TSOP type 1, CPL2  
– 63-ball VFBGA  
– One-time programmable (OTP) mode  
– Two-plane commands 4  
– Interleaved die (LUN) operations  
– Read unique ID  
– Block lock (1.8V only)  
– Internal data move  
• Operation status byte provides software method for  
detecting  
1. The ONFI 1.0 specification is available at  
www.onfi.org.  
Notes:  
2. CPL = Center parting line.  
3. See Program and Erase Characteristics for  
tR_ECC and tPROG_ECC specifications.  
4. These commands supported only with ECC  
disabled.  
– Operation completion  
– Pass/fail condition  
– Write-protect status  
• Ready/Busy# (R/B#) signal provides a hardware  
method of detecting operation completion  
• WP# signal: Write protect entire device  
PDF: 09005aef83b25735  
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2009 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  
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