5秒后页面跳转
捷配首页

Datasheet > MT29F4G08ABADAH4
MT29F4G08ABADAH4 PDF预览

MT29F4G08ABADAH4

更新时间： 2024-01-29 23:17:16
品牌 Logo 应用领域
镁光 - MICRON 闪存
页数 文件大小 规格书
132页 1301K
描述
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features

阅读下载

中文翻译

获取价格

MT29F4G08ABADAH4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：9 X 11 MM, 1 MM HEIGHT, VFBGA-63
Reach Compliance Code：compliantFactory Lead Time：4 weeks
风险等级：1.57最长访问时间：25 ns
命令用户界面：YES数据轮询：NO
JESD-30 代码：R-PBGA-B63长度：11 mm
内存密度：4294967296 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：4K端子数量：63
字数：536870912 words字数代码：512000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512MX8
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装等效代码：BGA63,10X12,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH页面大小：2K words
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：3/3.3 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1 mm
部门规模：128K最大待机电流：0.0001 A
子类别：Flash Memories最大压摆率：0.035 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
切换位：NO类型：SLC NAND TYPE
宽度：9 mmBase Number Matches：1

MT29F4G08ABADAH4 数据手册

 浏览型号MT29F4G08ABADAH4的Datasheet PDF文件第2页浏览型号MT29F4G08ABADAH4的Datasheet PDF文件第3页浏览型号MT29F4G08ABADAH4的Datasheet PDF文件第4页浏览型号MT29F4G08ABADAH4的Datasheet PDF文件第5页浏览型号MT29F4G08ABADAH4的Datasheet PDF文件第6页浏览型号MT29F4G08ABADAH4的Datasheet PDF文件第7页 
Micron Confidential and Proprietary  
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory  
Features  
NAND Flash Memory  
MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,  
MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,  
MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,  
MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,  
MT29F16G08AJADAWP  
• First block (block address 00h) is valid when ship-  
ped from factory with ECC. For minimum required  
ECC, see Error Management.  
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-  
cles are less than 1000  
Features  
• Open NAND Flash Interface (ONFI) 1.0-compliant1  
• Single-level cell (SLC) technology  
• Organization  
– Page size x8: 2112 bytes (2048 + 64 bytes)  
– Page size x16: 1056 words (1024 + 32 words)  
– Block size: 64 pages (128K + 4K bytes)  
– Plane size: 2 planes x 2048 blocks per plane  
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks  
16Gb: 16,384 blocks  
• RESET (FFh) required as first command after pow-  
er-on  
• Alternate method of device initialization (Nand_In-  
it) after power up (contact factory)  
• Internal data move operations supported within the  
plane from which data is read  
• Quality and reliability  
– Data retention: 10 years  
– Endurance: 100,000 PROGRAM/ERASE cycles  
• Operating voltage range  
• Asynchronous I/O performance  
–
tRC/tWC: 20ns (3.3V), 25ns (1.8V)  
• Array performance  
– Read page: 25µs 3  
– Program page: 200µs (TYP: 1.8V, 3.3V)3  
– Erase block: 700µs (TYP)  
– VCC: 2.7–3.6V  
– VCC: 1.7–1.95V  
• Operating temperature:  
• Command set: ONFI NAND Flash Protocol  
• Advanced command set  
– Commercial: 0°C to +70°C  
– Industrial (IT): –40ºC to +85ºC  
• Package  
– Program page cache mode4  
– Read page cache mode 4  
– 48-pin TSOP type 1, CPL2  
– 63-ball VFBGA  
– One-time programmable (OTP) mode  
– Two-plane commands 4  
– Interleaved die (LUN) operations  
– Read unique ID  
– Block lock (1.8V only)  
– Internal data move  
• Operation status byte provides software method for  
detecting  
1. The ONFI 1.0 specification is available at  
www.onfi.org.  
Notes:  
2. CPL = Center parting line.  
3. See Program and Erase Characteristics for  
tR_ECC and tPROG_ECC specifications.  
4. These commands supported only with ECC  
disabled.  
– Operation completion  
– Pass/fail condition  
– Write-protect status  
• Ready/Busy# (R/B#) signal provides a hardware  
method of detecting operation completion  
• WP# signal: Write protect entire device  
PDF: 09005aef83b25735  
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2009 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  
1234567...132

中文翻译

下载PDF

与MT29F4G08ABADAH4相关器件

型号 品牌 获取价格 描述 数据表
MT29F4G08ABADAH4-AATX MICRON

获取价格

 		This tech note describes considerations in thermal applications for Micron memory devices,
MT29F4G08ABADAH4-AITX MICRON

获取价格

 		This tech note describes considerations in thermal applications for Micron memory devices,
MT29F4G08ABADAH4-IT MICRON

获取价格

 		This tech note describes considerations in thermal applications for Micron memory devices,
MT29F4G08ABADAH4-ITX MICRON

获取价格

 		This tech note describes considerations in thermal applications for Micron memory devices,
MT29F4G08ABADAWP MICRON

获取价格

 		4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
MT29F4G08ABADAWP-AATX MICRON

获取价格

 		This tech note describes considerations in thermal applications for Micron memory devices,
MT29F4G08ABADAWP-AITX MICRON

获取价格

 		This tech note describes considerations in thermal applications for Micron memory devices,
MT29F4G08ABADAWP-IT MICRON

获取价格

 		This tech note describes considerations in thermal applications for Micron memory devices,
MT29F4G08ABADAWP-ITX MICRON

获取价格

 		This tech note describes considerations in thermal applications for Micron memory devices,
MT29F4G08ABAEAH4 MICRON

获取价格

 		This tech note describes considerations in thermal applications for Micron memory devices,

与MT29F4G08ABADAH4相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证