Datasheet > MT29F32G08ABAAAWP-ITZ

MT29F32G08ABAAAWP-ITZ

更新时间： 2024-09-29 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
132页	1301K
描述
This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.

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MT29F32G08ABAAAWP-ITZ 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TSOP1, TSSOP48,.8,20	Reach Compliance Code：	compliant
风险等级：	5.75	最长访问时间：	20 ns
其他特性：	SEATED HGT_CALCULATED	JESD-30 代码：	R-PDSO-G48
长度：	18.4 mm	内存密度：	34359738368 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	部门数/规模：	4K
端子数量：	48	字数：	4294967296 words
字数代码：	4000000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4GX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1	封装等效代码：	TSSOP48,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
页面大小：	8K words	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	编程电压：	3.3 V
就绪/忙碌：	YES	反向引出线：	NO
座面最大高度：	1.2 mm	部门规模：	1M
最大待机电流：	0.00005 A	最大压摆率：	0.05 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
切换位：	YES	类型：	SLC NAND TYPE
宽度：	12 mm	Base Number Matches：	1

MT29F32G08ABAAAWP-ITZ 数据手册

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Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

NAND Flash Memory

MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,

MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,

MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,

MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,

MT29F16G08AJADAWP

• First block (block address 00h) is valid when ship-

ped from factory with ECC. For minimum required

ECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-

cles are less than 1000

Features

• Open NAND Flash Interface (ONFI) 1.0-compliant¹

• Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 2048 blocks per plane

– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks

16Gb: 16,384 blocks

• RESET (FFh) required as first command after pow-

er-on

• Alternate method of device initialization (Nand_In-

it) after power up (contact factory)

• Internal data move operations supported within the

plane from which data is read

• Quality and reliability

– Data retention: 10 years

– Endurance: 100,000 PROGRAM/ERASE cycles

• Operating voltage range

• Asynchronous I/O performance

–

^tRC/^tWC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs ³

– Program page: 200µs (TYP: 1.8V, 3.3V)³

– Erase block: 700µs (TYP)

– V_CC: 2.7–3.6V

– V_CC: 1.7–1.95V

• Operating temperature:

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Commercial: 0°C to +70°C

– Industrial (IT): –40ºC to +85ºC

• Package

– Program page cache mode⁴

– Read page cache mode ⁴

– 48-pin TSOP type 1, CPL²

– 63-ball VFBGA

– One-time programmable (OTP) mode

– Two-plane commands ⁴

– Interleaved die (LUN) operations

– Read unique ID

– Block lock (1.8V only)

– Internal data move

• Operation status byte provides software method for

detecting

1. The ONFI 1.0 specification is available at

www.onfi.org.

Notes:

2. CPL = Center parting line.

3. See Program and Erase Characteristics for

^tR_ECC and ^tPROG_ECC specifications.

4. These commands supported only with ECC

disabled.

– Operation completion

– Pass/fail condition

– Write-protect status

• Ready/Busy# (R/B#) signal provides a hardware

method of detecting operation completion

• WP# signal: Write protect entire device

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...132

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与MT29F32G08ABAAAWP-ITZ相关器件

型号	品牌	获取价格	描述	数据表
MT29F32G08ABAAAWP-Z	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F32G08ABCABH1-10ITZ	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F32G08ABCABH1-10Z	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F32G08ABCDBJ4-6	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F32G08ABEABM73A3WC1	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F32G08AFABAWP-IT	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F32G08AFACAWP-Z	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
MT29F32G08CBACA	MICRON	获取价格	Micron Confidential and Proprietary
MT29F32G08CBACAWP-Z	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT29F32G08CBADAL83A3WC1	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard

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