Datasheet > MT250QL128BBB3E120SITES

MT250QL128BBB3E120SITES

更新时间： 2025-07-20 00:02:19

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
97页	1038K
描述
Micron Serial NOR Flash Memory

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256Mb, 3V Multiple I/O Serial Flash Memory

Features

Micron Serial NOR Flash Memory

3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

MT25QL256ABA

Options

Marking

Features

• SPI-compatible serial bus interface

• Single and double transfer rate (STR/DTR)

• Clock frequency

– 133 MHz (MAX) for all protocols in STR

– 90 MHz (MAX) for all protocols in DTR

• Dual/quad I/O commands for increased through-

put up to 90 MB/s

• Supported protocols: Extended, Dual and Quad I/O

both STR and DTR

• Voltage

– 2.7–3.6V

• Density

– 256Mb

• Device stacking

– Monolithic

• Device generation

• Die revision

• Pin configuration

– RESET# and HOLD#

• Sector size

256

• Execute-in-place (XIP)

• PROGRAM/ERASE SUSPEND operations

• Volatile and nonvolatile configuration settings

• Software reset

• Additional reset pin for selected part numbers

• 3-byte and 4-byte address modes – enable memory

access beyond 128Mb

• Dedicated 64-byte OTP area outside main memory

– Readable and user-lockable

– Permanent lock with PROGRAM OTP command

• Erase capability

– 64KB

• Packages – JEDEC-standard, RoHS-

compliant

– 24-ball T-PBGA 05/6mm × 8mm

(5 × 5 array)

– 24-ball T-PBGA 05/6mm × 8mm

(4 × 6 array)

– 16-pin SOP2, 300 mils

(SO16W, SO16-Wide, SOIC-16)

– W-PDFN-8 6mm × 5mm

(MLP8 6mm × 5mm)

– W-PDFN-8 8mm × 6mm

(MLP8 8mm × 6mm)

• Security features

– Standard security

• Special options

– Bulk erase

– Sector erase 64KB uniform granularity

– Subsector erase 4KB, 32KB granularity

• Erase performance: 400KB/sec (64KB sector)

• Erase performance: 80KB/sec (4KB sub-sector)

• Program performance: 2MB/sec

• Security and write protection

– Volatile and nonvolatile locking and software

write protection for each 64KB sector

– Nonvolatile configuration locking

– Password protection

– Hardware write protection: nonvolatile bits

(BP[3:0] and TB) define protected area size

– Program/erase protection during power-up

– CRC detects accidental changes to raw data

• Electronic signature

– Standard

– Automotive

• Operating temperature range

– From –40°C to +85°C

– From –40°C to +105°C

– From –40°C to +125°C

– JEDEC-standard 3-byte signature (BA19h)

– Extended device ID: two additional bytes identify

device factory options

• JESD47H-compliant

– Minimum 100,000 ERASE cycles per sector

– Data retention: 20 years (TYP)

CCMTD-1725822587-3368

mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与MT250QL128BBB3E120SITES相关器件

型号	品牌	获取价格	描述	数据表
MT250QL128BBB3E140AATES	MICRON	获取价格	3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT250QL128BBB3E140AITES	MICRON	获取价格	3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT250QL128BBB3E140SATES	MICRON	获取价格	3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT250QL128BBB3E140SITES	MICRON	获取价格	3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT250QL128BBB3ESC0AATES	MICRON	获取价格	3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT250QL128BBB3ESC0AITES	MICRON	获取价格	3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT250QL128BBB3ESC0SATES	MICRON	获取价格	3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT250QL128BBB3ESC0SITES	MICRON	获取价格	3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT250QL128BBB3ESE0AITES	MICRON	获取价格	3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase
MT250QL128BBB3ESE0SATES	MICRON	获取价格	3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

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