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MT200CB12T2 PDF预览

MT200CB12T2

更新时间: 2024-11-20 01:21:35
品牌 Logo 应用领域
江苏爱普特 - APTSEMI /
页数 文件大小 规格书
4页 168K
描述
Thyristor/Diode Modules

MT200CB12T2 数据手册

 浏览型号MT200CB12T2的Datasheet PDF文件第2页浏览型号MT200CB12T2的Datasheet PDF文件第3页浏览型号MT200CB12T2的Datasheet PDF文件第4页 
MT200CB20T2  
Thyristor/Diode Modules  
VRRM / VDRM  
IFAV / ITAV  
800 to 2000V  
200Amp  
Applications  
y
y
y
y
Power Converters  
Lighting Control  
DC Motor Control and Drives  
Heat and temperature control  
Circuit  
Features  
y
y
y
y
y
International standard package  
High Surge Capability  
Glass passivated chip  
Simple Mounting  
Heat transfer through aluminum oxide  
DBCceramic isolated metal baseplate  
UL recognized applied for file no. E360040  
y
Module Type  
TYPE  
VRRM/VDRM  
VRSM  
MT200CB08T2  
MT200CB12T2  
MT200CB16T2  
MT200CB18T2  
MT200CB20T2  
800V  
1200V  
1600V  
1800V  
900V  
1300V  
1700V  
1900V  
Diode  
Maximum Ratings  
Symbol  
Item  
Conditions  
Values  
Units  
A
ID  
IFSM  
i2t  
Output Current(D.C.)  
Tc=85℃  
200  
Surge forward current  
t=10mS Tvj =45℃  
6800  
A
A2s  
Circuit Fusing Consideration  
Isolation Breakdown Voltage(R.M.S)  
Operating Junction Temperature  
Storage Temperature  
231200  
3000  
Visol  
Tvj  
a.c.50HZ;r.m.s.;1min  
V
-40 to +125  
-40 to +125  
3±15%  
5±15%  
165  
Tstg  
Mt  
Mounting Torque  
To terminals(M6)  
To heatsink(M6)  
Nm  
Nm  
g
Ms  
Weight  
ModuleApproximately)  
Thermal Characteristics  
Symbol  
Rth(j-c)  
Item  
Conditions  
Junction to Case  
Values  
0.08  
Units  
/W  
Thermal Impedance, max.  
Rth(c-s) Thermal Impedance, max.  
Case to Heatsink  
0.05  
/W  
Electrical Characteristics  
Values  
Min. Typ.  
Symbol  
VFM  
Item  
Conditions  
Units  
Max.  
1.70  
Forward Voltage Drop, max.  
V
T=25IF =620A  
Tvj =25VRD=VRRM  
Tvj =125VRD=VRRM  
Repetitive Peak Reverse Current,  
max.  
0.5  
9  
mA  
mA  
IRRM  
Document Number:S-M0052  
Rev.1.0, May.31, 2013  
www.apt-semi.com  
1

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