512MB, 1GB (x64, DR) 200-Pin DDR SODIMM
Fe a t u re s
DDR SDRAM SODIMM
MT16VDDF6464H – 512MB
MT16VDDF12864H – 1GB
For component data sheets, refer to Micron’s Web site: www.micron.com
Fig u re 2:
1GB 200-Pin SODIMM (MO-244)
Fe a t u re s
• 200-pin, small-outline dual in-line memory module
PCB height: 31.75mm (1.25in)
(SODIMM)
• Fast data transfer rates: PC2100, PC2700, and PC3200
• 512MB (64 Meg x 64) and 1GB (128 Meg x 64)
• VDD = VDDQ = +2.5V
(-40B: VDD = VDDQ = +2.6V)
• VDDSPD = +2.3V to +3.6V
• 2.5V I/ O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
2n-prefetch architecture; two data accesses per clock
cycle
• Bidirectional data strobe (DQS) transmitted/ received
with data—that is, source-synchronous data capture
• Differential clock inputs CK and CK#
• Multiple internal device banks for concurrent
operation
• Dual rank
• Programmable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
Op t io n s
• Self refresh current
– Standard
– Low power
• Operating temperature
– Commercial (0°C ≤ T ≤ +70°C)
– Industrial (–40°C ≤ T ≤ +85°C)
• Package
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
• Memory clock, speed, CAS latency
– 5.0ns (200 MHz), 400 MT/ s, CL = 3
– 6.0ns (167 MHz), 333 MT/ s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/ s, CL = 2.5
Ma rkin g
None
L
1
None
I
A
A
G
Y
2
• Gold edge contacts
-40B
-335
-265
200-Pin SODIMM Fig u re s
2
Notes: 1. See Table 9 on page 10 , Table 10 on page 11,
or Table 11 on page 12 for low power values.
Fig u re 1:
512MB 200-Pin SODIMM (MO-244)
PCB height: 31.75mm (1.25in)
2. Contact Micron for product availability.
PDF: 09005aef80a77a90/Source: 09005aef80a646bc
DDF16C64_128x64_L_H.fm - Rev. G 8/08 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
1
Products and specifications discussed herein are subject to change by Micron without notice.