Datasheet > MT16HTF6464AY

MT16HTF6464AY

更新时间： 2024-11-05 00:47:55

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
21页	420K
描述
DDR2 SDRAM Unbuffered DIMM

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中文翻译

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数据手册

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MT16HTF6464AY 数据手册

512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM

Features

DDR2 SDRAM Unbuffered DIMM

MT16HTF6464A – 512MB

MT16HTF12864A – 1GB

MT16HTF25664A – 2GB

For component specifications, refer to the Micron’s Web site: www.micron.com/ddr2

Figure 1:

240-Pin DIMM (MO-237 R/C “B”)

Features

• 240-pin, unbuffered, dual in-line memory module

(UDIMM)

PCB height: 29.97mm (1.18in)

• Fast data transfer rates: PC2-3200, PC2-4200, PC2-

5300, or PC2-6400

• 512MB (64 Meg x 64), 1GB (128 Meg x 64), and 2GB

(256 Meg x 64)

• VDD = VDDQ = +1.8V

• VDDSPD = +1.7V to +3.6V

• JEDEC standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• Four-bit prefetch architecture

• DLL to align DQ and DQS transitions with CK

• Multiple internal device banks for concurrent

operation

Options

• Package

240-pin DIMM (lead-free)

• Frequency/CL

2.5ns @ CL = 5 (DDR2-800)

3.0ns @ CL = 5 (DDR2-667)

3.75ns @ CL = 4 (DDR2-533)

5.0ns @ CL = 3 (DDR2-400)

• PCB height

Marking

-80E

-667

-53E

-40E

• Programmable CAS latency (CL)

• Posted CAS additive latency (AL)

• WRITE latency = READ latency - 1 CK

• Programmable burst lengths: 4 or 8

• Adjustable data-output drive strength

• 64ms, 8,192-cycle refresh

• On-die termination (ODT)

• Serial presence-detect (SPD) with EEPROM

• Gold edge contacts

29.97mm (1.18in)

Notes: 1. CL = CAS (READ) latency.

2. Not available in 512MB density.

3. Not available in 2GB density.

• Dual rank

PDF: 09005aef80f09084/Source: 09005aef80f09068

HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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