MT160CB18T2
Thyristor/Diode Modules
VRRM / VDRM
IFAV / ITAV
800 to 1800V
160Amp
Applications
y
y
y
y
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
y
y
y
y
y
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide
DBCceramic isolated metal baseplate
UL recognized applied for file no. E360040
y
Module Type
TYPE
VRRM/VDRM
VRSM
MT160CB08T2
MT160CB12T2
MT160CB16T2
MT160CB18T2
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
◆Diode
Maximum Ratings
Symbol
Item
Conditions
Values
Units
A
ID
IFSM
i2t
Output Current(D.C.)
Tc=85℃
160
Surge forward current
t=10mS Tvj =45℃
5400
A
A2s
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
145000
3000
Visol
Tvj
a.c.50HZ;r.m.s.;1min
V
-40 to +125
-40 to +125
3±15%
5±15%
165
℃
Tstg
Mt
℃
Mounting Torque
To terminals(M6)
To heatsink(M6)
Nm
Nm
g
Ms
Weight
Module(Approximately)
Thermal Characteristics
Symbol
Rth(j-c)
Item
Conditions
Junction to Case
Values
0.085
Units
℃/W
Thermal Impedance, max.
Rth(c-s) Thermal Impedance, max.
Case to Heatsink
0.05
℃/W
Electrical Characteristics
Values
Min. Typ.
Symbol
VFM
Item
Conditions
Units
Max.
1.70
Forward Voltage Drop, max.
V
T=25℃IF =500A
Tvj =25℃VRD=VRRM
Tvj =125℃VRD=VRRM
Repetitive Peak Reverse Current,
max.
≤0.5
≤9
mA
mA
IRRM
Document Number: S-M0051
Rev.1.0, May.31, 2013
www.apt-semi.com
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