Datasheet > MSS60-848-B80

MSS60-848-B80

更新时间： 2024-11-25 14:50:23

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描述
Extra High Barrier Silicon Schottky Diodes

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MSS60-848-B80 数据手册

Extra High Barrier Silicon Schottky Diodes

MSS60-xxx-x Series

Rev. V3

Features

•

V_F, R_Dand C_JMatching Options

Beam Lead & Packaged Devices

Hi-Rel Screening Available per:

MIL-PRF-19500 & MIL-PRF-38534

Description

The MSS60-xxx-x Series of Schottky diodes are

fabricated on N-Type epitaxial substrates using

proprietary processes that yield the highest FCOs in

the industry. Optimum mixer performance is

obtained with LO power of 6 dBm to 12 dBm per

diode.

Beam Lead

Electrical Specifications: T_A= 25°C

V_F

Typ.

V_BR

Min.

C_J

R_S

Typ.

R_D

Max.

Typ. / Max.

Model

Configuration

Outline

V_R= 0 V

F = 1 MHz

I_F= 1 mA

I_R= 10 µA

3.5

I = 5 mA

MSS60-144-B10B

MSS60-148-B10B

MSS60-153-B10B

MSS60-244-B20

MSS60-248-B20

MSS60-253-B20

MSS60-444-B42

MSS60-448-B42

MSS60-453-B42

MSS60-841-B80

MSS60-846-B80

MSS60-848-B80

Single Junction

Series Tee

Ring Quad

625

650

1200

0.08 / 0.10

0.12 / 0.15

0.20 / 0.25

0.08 / 0.10

0.12 / 0.15

0.20 / 0.25

0.08 / 0.10

0.12 / 0.15

0.25 / 0.30

0.06 / 0.08

0.10 / 0.12

0.12 / 0.15

B10B

B20

B42

B80

3.5

Ring Quad

3.5

Ring Quad

3.5

Ring Quad

6.0

Ring Quad

6.0

Ring Quad

6.0

(Continued next page)

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0011417

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