Datasheet > MSRT200100A

MSRT200100A

更新时间： 2024-02-21 13:01:37

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	667K
描述
High Surge Capability

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中文翻译

获取价格

数据手册

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MSRT200100A 数据手册

MSRT20060(A)D thru MSRT200100(A)D

V_RRM= 600 V - 1000 V

I_F(AV)= 200 A

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 600 V to 1000 V V_RRM

Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

MSRT200XXAD

MSRT200XXADR

MSRT200XXD

Maximum ratings, at T_j= 25 °C, unless otherwise specified

Conditions

MSRT20060(A)D

MSRT20080(A)D MSRT200100(A)D

Parameter

Symbol

Unit

V_RRM

V_RMS

V_DC

T_j

600

424

800

566

1000

707

Repetitive peak reverse voltage

RMS reverse voltage

600

800

1000

DC blocking voltage

-55 to 150

Operating temperature

Storage temperature

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 140 °C

MSRT20060(A)D

MSRT20080(A)D MSRT200100(A)D

Parameter

Symbol

I_F(AV)

I_FSM

Unit

Average forward current (per

leg)

200

3000

1.1

200

3000

1.1

200

3000

1.1

Peak forward surge current

(per leg)

t_p= 8.3 ms, half sine

I_FM= 200 A, T_j= 25 °C

Maximum instantaneous

forward voltage (per leg)

V_F

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

T_j= 25 °C

μA

I_R

T_j= 150 °C

Thermal characteristics

Maximum thermal resistance,

junction - case (per leg)

R_Θjc

0.35

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/msrt200100ad.pdf

12 3

中文翻译

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