Datasheet > MSNP10065G1

MSNP10065G1

更新时间： 2024-11-15 18:09:47

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
5页	697K
描述
TO-220C-2L

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中文翻译

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数据手册

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MSNP10065G1 数据手册

MSNP10065G1

650V Silicon Carbide Schottky Diode

Features

Benefits

-650-Volt Schottky Rectifier

-Shorter recovery time

-High-speed switching possible

-High-Frequency Operation

-Higher safety margin against overvoltage

-Improved efficiency all load conditions

-Increased efficiency compared to Silicon Diode alternatives

-Reduction of Heat Sink Requirements

-Temperature-Independent Switching Behavior

-Extremely Fast Switching

-Parallel Devices Without Thermal Runaway

-Essentialy No Switching Losses

-Positive Temperature Coefficient on VF

Package

Applications

-Switch Mode Power Supplies

- Server/Telecom Power Supplies

-Industrial Power Supplies

-Solar Inverters

Type : TO-220 -2lead

1、Cathode 2、Anode

PIN 1

PIN 2

Absolute Maximum Ratings

T_C= 25℃ unless otherwise noted

MSNP10065G1

Symbol

Parameter

Units

VRRM

VRSM

Repetitive Peak Reverse Voltage

650

Surge Peak Reverse Voltage

DC Blocking Voltage

650

VDC

Continuous Forward Current

@Tc=135℃

Repetitive Peak Forward Surge Current @TC=25

tp = 10 ms, Half Sine Wave

̊C

IFRM

IFSM

Non-Repetitive Peak Forward Surge Current @TC=25

tp= 10 ms, Half Sine Wave

̊C

Non-Repetitive Peak Forward Surge Current

840

@TC=25

̊C, tp= 10 us，pulse

Power Dissipation

@Tc=25℃

@Tc=110℃

Ptot

TJ , Tstg

Operating Junction and Storage Temperature

Isolation Blocking Voltage (leg to case)

-55 to +175

3000

Rev1.1 Sep . 2021

Msemitek Co., Ltd

http://www.msemitek.com

12 3 4 5

中文翻译

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