Datasheet > MSM8521CBI-020

MSM8521CBI-020

更新时间： 2024-01-21 03:17:07

品牌	Logo	应用领域
MOSAIC		/
页数	文件大小	规格书
11页	151K
描述
512K x 8 Static RAM Issue 5.2 April 2001

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数据手册

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MSM8521CBI-020 数据手册

512Kx8StaticRAM

MSM8512C - 020

Issue 5.2 April 2001

Description

Block Diagram

The MSM8512C is a 512K x 8 SRAM monolithic

device available in Chip Size BGA (Ball Grid Array)

package, with access times of 20ns. The device is

available to commercial and industrial temperature

grades.

/CS

/OE

/WE

The Chip Size BGA provides an ultra high density

memory packaging solution.

The Chip Size BGA occupies less than 50% of the

board area of conventional SOP, SOJ and TSOP II

packages.

512K x 8

SRAM

Features

• Access times of 20 ns.

• 5V + 10%, (3.3V Under Development)

• Commercial & Industrial temperature grades

• Chip Size BGA.

Pin Definition

See page 2.

• 48 pad, 1mm pad pitch, package.

• Eutectic 63/67 solder ball attach.

• Low Power Dissipation.

Operating

Standby (CMOS) 66mW (max)

• Completely Static Operation.

1 W (max)

Pin Functions

• 4 layer BT substrate with power and ground

planes.

Description

Signal

• Pinout and footprint will remain the same in the

event of a die shrink.

Address Input

A0~A18

D0~D7

/CS

Data Input/Output

Chip Select

Write Enable

Output Enable

No Connect

Power

/WE

/OE

Package Details

V_CC

48D - 48 Ball, 1mm pitch Chip Size BGA

Max. Dimensions (mm) - 8.00 x 10.00 x 1.40

Ground

GND

12 3 4 5 6 7...11

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