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MSM51V4400E-70SJ PDF预览

MSM51V4400E-70SJ

更新时间: 2024-11-26 13:02:07
品牌 Logo 应用领域
冲电气 - OKI /
页数 文件大小 规格书
14页 171K
描述
Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20

MSM51V4400E-70SJ 技术参数

生命周期:Transferred零件包装代码:SOJ
包装说明:SOJ,针数:20
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.44
Is Samacsys:N访问模式:FAST PAGE
最长访问时间:70 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码:R-PDSO-J20长度:17.15 mm
内存密度:4194304 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:20
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:-10 °C组织:1MX4
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified座面最大高度:3.55 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL宽度:7.62 mm
Base Number Matches:1

MSM51V4400E-70SJ 数据手册

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FEDD51V4400E-01  
This version : Aug. 2000  
Semiconductor  
MSM51V4400E  
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE  
DESCRIPTION  
The MSM51V4400E is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS  
technology. The MSM51V4400E achieves high integration, high-speed operation, and low-power consumption  
because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The  
MSM51V4400E is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP.  
FEATURES  
1,048,576-word × 4-bit configuration  
Single 3.3V power supply, ±0.3V tolerance  
Input  
: LVTTL compatible, low input capacitance  
: LVTTL compatible, 3-state  
Output  
Refresh : 1024 cycles/16 ms  
Fast page mode, read modify write capability  
CAS before RAS refresh, hidden refresh, RAS-only refresh capability  
Multi-bit test mode capability  
Package options:  
26/20-pin 300mil plastic SOJ  
26/20-pin 300mil plastic TSOP  
(SOJ26/20-P-300-1.27)  
(Product : MSM51V4400E-xxSJ)  
(TSOPII26/20-P-300-1.27-K) (Product : MSM51V4400E-xxTS-K)  
xx indicates speed rank.  
PRODUCT FAMILY  
Access Time (Max.)  
Power Dissipation  
Cycle Time  
(Min.)  
Family  
t
t
t
t
OEA  
Operating (Max.) Standby (Max.)  
RAC  
AA  
CAC  
MSM51V4400E-70  
MSM51V4400E-10  
70ns  
35ns  
50ns  
20ns  
25ns  
20ns  
25ns  
130ns  
180ns  
234mW  
1.8mW  
198mW  
100ns  
1/14  

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MSM51V4400E-70TS-K OKI

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Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
MSM51V4400L-60TS-K OKI

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Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, TSOP2-26/20
MSM51V4400L-60TS-L OKI

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Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, TSOP2-26/20
MSM51V4400L-70SJ OKI

获取价格

Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
MSM51V4400L-80SJ OKI

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Fast Page DRAM, 1MX4, 80ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20