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MSM51V16405FSL-70TS-K PDF预览

MSM51V16405FSL-70TS-K

更新时间: 2024-11-19 06:09:03
品牌 Logo 应用领域
冲电气 - OKI 动态存储器光电二极管
页数 文件大小 规格书
17页 240K
描述
EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/24

MSM51V16405FSL-70TS-K 数据手册

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FEDD51V16405F-01  
This version: May 2001  
Previous version :  
1
Semiconductor  
MSM51V16405F  
4,194,304-Word × 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO  
DESCRIPTION  
The MSM51V16405F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate  
CMOS technology. The MSM51V16405F achieves high integration, high-speed operation, and low-  
power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer  
metal CMOS process. The MSM51V16405F is available in a 26/24-pin plastic SOJ or 26/24-pin plastic  
TSOP.  
FEATURES  
4,194,304-word × 4-bit configuration  
Single 3.3V power supply, ±0.3V tolerance  
Input : LVTTL compatible, low input capacitance  
Output : LVTTL compatible, 3-state  
Refresh : 4096 cycles/64ms  
Fast page mode with EDO, read modify write capability  
CAS before RAS refresh, hidden refresh, RAS-only refresh capability  
Packages  
26/24-pin 300mil plastic SOJ (SOJ26/24-P-300-1.27)  
(Product : MSM51V16405F-xxSJ)  
26/24-pin 300mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM51V16405F-xxTS-K)  
xx indicates speed rank.  
PRODUCT FAMILY  
Access Time (Max.)  
Power Dissipation  
Cycle Time  
(Min.)  
Family  
Operating  
(Max.)  
Standby  
(Max.)  
t
t
t
t
OEA  
RAC  
AA  
CAC  
50ns  
60ns  
70ns  
25ns  
30ns  
35ns  
13ns  
15ns  
20ns  
13ns  
15ns  
20ns  
84ns  
104ns  
124ns  
360mW  
324mW  
288mW  
MSM51V16405F  
1.8mW  
1/17  

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