Datasheet > MSM04065G1

MSM04065G1

更新时间： 2024-11-18 18:09:31

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
5页	466K
描述
DFN5*6

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中文翻译

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MSM04065G1 数据手册

MSM04065G1

650V Silicon Carbide Schottky Diode

Features

Benefits

-650-Volt Schottky Rectifier

-Shorter recovery time

-High-speed switching possible

-High-Frequency Operation

-Higher safety margin against overvoltage

-Improved efficiency all load conditions

-Increased efficiency compared to Silicon Diode alternatives

-Reduction of Heat Sink Requirements

-Temperature-Independent Switching Behavior

-Extremely Fast Switching

-Positive Temperature Coefficient on VF

-Parallel Devices Without Thermal Runaway

-Essentialy No Switching Losses

Applications

Package

Type : DFN 5*6

5.6.7.8: Cathode

1.2.3: Anode

4: NG

-Switch Mode Power Supplies

-Power Factor Correction

-Motor Drives

-HID Lighting

Absolute Maximum Ratings

T_C= 25℃ unless otherwise noted

Symbol

Parameter

MSM04065G1

Units Note

VRRM

Repetitive Peak Reverse Voltage

650

VRSM

VDC

Surge Peak Reverse Voltage

DC Blocking Voltage

650

Continuous Forward Current @Tc=25

℃

@Tc=135

@Tc=150

Fig. 7

4.8

Repetitive Peak Forward Surge Current @TC=25 C

IFRM

IFSM

tp = 10 ms, Half Sine Wave

Non-Repetitive Peak Forward Surge Current @TC=25 C

tp= 10 ms, Half Sine Wave

Non-Repetitive Peak Forward Surge Current

200

IF,Max

@TC=25

76.5

33.2

Power Dissipation

℃

Ptot

Fig. 6

@Tc=110

℃

TJ , Tstg

Operating Junction and Storage Temperature

-55 to +175

Rev1.1 Oct. 2023

Msemitek Co., Ltd

http://www.msemitek.com

12 3 4 5

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