Datasheet > MSH20065G1

MSH20065G1

更新时间： 2024-09-22 18:09:35

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
6页	810K
描述
TO-247-2L

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中文翻译

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数据手册

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MSH20065G1 数据手册

MSH20065G1

650V Silicon Carbide Diode

Features

Benefits

-Higher safety margin against overvoltage

-Improved efficiency all load conditions

-Increased efficiency compared to Silicon Diode alternatives

-Reduction of Heat Sink Requirements

-650-Volt Schottky Rectifier

-Shorter recovery time

-High-speed switching possible

-High-Frequency Operation

-Parallel Devices Without Thermal Runaway

-Essentialy No Switching Losses

-Temperature-Independent Switching Behavior

-Extremely Fast Switching

-Positive Temperature Coefficient on VF

Applications

Package

-Switch Mode Power Supplies

-Power Factor Correction

-Motor Drives

Type : TO-247-2Lead

-Charging Pile Power

PIN 1

PIN 2

Absolute Maximum Ratings

T_C= 25 ℃ unless otherwise noted

Symbol

Parameter

MSH20065G1

Units

VRRM

Repetitive Peak Reverse Voltage

650

VRSM

VDC

Surge Peak Reverse Voltage

650

DC Blocking Voltage

Continuous Forward Current

@Tc=150℃

Repetitive Peak Forward Surge Current

@TC=25 C, tP = 10 ms, Half Sine Wave

140

IFRM

Non-Repetitive Peak Forward Surge Current

(Per Leg)

170

IFSM

@TC=25

̊C, tP = 10 ms, Half Sine Wave

1360

IF,Max

Ptot

Non-Repetitive Peak Forward Surge Current ;@TC=25˚C, tP= 10 μs, Pulse

300

130

Power Dissipation

(Per Leg/Device)

@Tc=25℃

@Tc=110℃

I²t value，TC=25˚C

A²s

∫ i²dt

TJ , Tstg

Operating Junction and Storage Temperature

-55 to +175

̊ C

Maple Semiconductor Co.,Ltd

http://www.maplesemi.com

Rev1.0 Oct . 2020

12 3 4 5 6

中文翻译

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