MSH12170G1
1700V Silicon Carbide Diode
Features
Benefits
-Higher safety margin against overvoltage
-Improved efficiency all load conditions
-Increased efficiency compared to Silicon Diode alternatives
-Reduction of Heat Sink Requirements
-1200-Volt Schottky Rectifier
-Shorter recovery time
-High-speed switching possible
-High-Frequency Operation
-Parallel Devices Without Thermal Runaway
-Essentialy No Switching Losses
-Temperature-Independent Switching Behavior
-Extremely Fast Switching
-Positive Temperature Coefficient on VF
Applications
Package
-Switch Mode Power Supplies
-Power Factor Correction
-Motor Drives
Type : TO-247-2Lead
-PD Power
-Charging Pile Power
-PV Inverter
PIN 1
PIN 2
Absolute Maximum Ratings
TC = 25 ℃ unless otherwise noted
Symbol
Parameter
MSH12170G1
Units
VRRM
Repetitive Peak Reverse Voltage
1700
V
VRSM
VDC
Surge Peak Reverse Voltage
DC Blocking Voltage
1700
1700
V
V
Continuous Forward Current
13.5
36.4
IF
@Tc=150℃
@Tc=25℃
A
A
A
Repetitive Peak Forward Surge Current
60
IFRM
@TC=25 C̊ , tP = 10 ms, Half Sine Wave
Non-Repetitive Peak Forward Surge Current
(Per Leg)
72
-
IFSM
@TC=25
̊C, tP = 10 ms, Half Sine Wave
IF,Max
Non-Repetitive Peak Forward Surge Current ;@TC=25˚C, tP= 10 μs, Pulse
A
192
83
Power Dissipation
(Per Leg/Device)
@Tc=25℃
@Tc=110℃
Ptot
W
TJ , Tstg
Operating Junction and Storage Temperature
-55 to +175
̊ C
Rev1.0 Jul . 2021
Msemitek Co., Ltd
http://www.msemitek.com