Datasheet > MSG50T120FHW

MSG50T120FHW

更新时间： 2024-11-10 18:09:51

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
7页	8669K
描述
TO-264

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中文翻译

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数据手册

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MSG50T120FHW 数据手册

MSG50T120FHW

1200V Field stop Trench IGBT

Features



High Speed Switching & Low Power Loss

High Input Impedance

VCE(sat) = 2V @ IC = 50A

High Input Impedance

Applications



PFC

UPS

Inverter

Absolute Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage

Gate-emitter voltage

V_CES

V_GES

1200

±20

100

T_C=25°C

Collector curre

I_C

T_C=100°C

Pulsed collector current, pulse time limited by Tjmax

Diode forward current @ T_C= 100°C

I_CM

I_F

160

Diode pulsed current, Pulse time limited by Tjmax

I_FM

210

360

150

T_C=25°C

Power dissipati

P_D

μS

°C

T_C=100°C

Short circuit withstand time

V_CE= 600V, V_GE= 15V, T_C= 150°C

Allowed number of short circuit < 1000

Time between short circuits ≥ 1.0s

tsc

T_J

-55 to155

Operating Junction and storage temperature rang

T_stg

Thermal Characteristics

Parameter

Symbol

Value

Unit

Thermal resistance junction-to-ambien

Thermal resistance junction-to-case for IGBT

Thermal resistance junction-to-case for Diod

R_θJA

R_θJC

0.35

0.8

°C/W

H1.01

Maspower

12 3 4 5 6 7

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