Datasheet > MSG36A51

MSG36A51

更新时间： 2024-09-16 20:47:15

品牌	Logo	应用领域
松下 - PANASONIC		放大器光电二极管晶体管
页数	文件大小	规格书
2页	56K
描述
RF Small Signal Bipolar Transistor, 2-Element, L Band, Silicon Germanium, NPN, SSSMINI6-F1, 6 PIN

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技术参数
数据手册

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MSG36A51 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84
基于收集器的最大容量：	0.59 pF	集电极-发射极最大电压：	6 V
配置：	SEPARATE, 2 ELEMENTS	最高频带：	L BAND
JESD-30 代码：	R-PDSO-F6	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON GERMANIUM	标称过渡频率 (fT)：	20000 MHz
Base Number Matches：	1

MSG36A51 数据手册

New

Strike a balance between high breakdown voltage and high cut-off frequency.

High breakdown voltage SiGe HBT

for general RF use

Overview

Excellent high-frequency performance and high breakdown voltage have been achieved by using the 0.25µm SiGe HBT.

The products are suitable for VCO oscillator/buffer amplifier, TV tuner LNA and other RF applications,

where improved electrical properties such as power consumption, noise figures and gain are desired.

In addition, the compact body can drastically reduce the size of a handset or instrument.

Features

• Cut-off frequency fT = 20 GHz, operation breakdown voltage BVce-on = 6 V,

collector output capacitance = half of conventional products.

• Noise figure NF = 0.9 dB, power gain PG =16 dB

at frequency of 1 GHz.

• Ultra-small packages of ML3-N2 (1.0×0.6×0.4mm)/

SSSMini6-F1 (1.0×0.8×0.4mm).

1.0×0.6×0.4mm

1.0×0.8×0.4mm

(1 chip)

(2 chips)

Applications

• VCO for cellular phones, PHS, wireless LANs, etc.

• LNA for cellular phones, tuners, etc.

--- Operation breakdown voltage vs cut-off frequency/noise figure ---

Cut-off frequency

Noise figure

2.5

2.0

1.5

1.0

0.5

0.0

Si Bipolar

SiGe HBT

Si Bipolar

SiGe HBT

•

NEW SiGe HBT

•

(dB)

•

(GHz)

•

NEW SiGe HBT

•

More practical !!

Operation breakdown voltage ( V )

Products and specifications are subject to change without notice. Please ask for the latest Product Standards to guarantee the satisfaction of your product requirements.

1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan

M00571AE

Tel. +81-75-951-8151

http://www.panasonic.co.jp/semicon/

New publication, effective from 02 Aug. 2002

中文翻译

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与MSG36A51相关器件

型号	品牌	获取价格	描述	数据表
MSG36C42	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.06A I(C), 2-Element, L Band, Silicon Germanium, NPN,
MSG36D42	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN,
MSG36E31	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN,
MSG36E41	PANASONIC	获取价格	SiGe HBT type
MSG40T120FQC	MASPOWER	获取价格	TO-247
MSG43001	PANASONIC	获取价格	SiGe HBT type For low-noise RF amplifier
MSG43002	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, L Band, Silicon Germanium, NPN,
MSG43003	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Silicon Germanium, NPN, 0.60 X 1
MSG43004	PANASONIC	获取价格	SiGe HBT type For low-noise RF amplifier
MSG50D60HLE0	MASPOWER	获取价格	TO-263

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