Datasheet > MSG20T65FLE

MSG20T65FLE

更新时间： 2024-11-10 18:09:07

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
6页	2991K
描述
TO-263

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数据手册

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MSG20T65FLE 数据手册

①

MSG20T65FLE

650V Field stop Trench IGBT

Features



High Speed Switching & Low Power Loss

High Input Impedance

VCE(sat) = 1.6V @ IC = 20A

High Input Impedance

Short circuit withstand time 10 µs

Applications



PFC

UPS

Inverter

Absolute Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage

Gate-emitter voltage

V_CES

V_GES

650

±30

T_C=25°C

Collector curre

I_C

T_C=100°C

Pulsed collector current, pulse time limited by Tjmax

Diode forward current @ T_C= 100°C

I_CM

I_F

Diode pulsed current, Pulse time limited by Tjmax

I_FM

210

T_C=25°C

Power dissipati

227

P_D

T_C=100°C

100

T_J

-55 to155

Operating Junction and storage temperature rang

°C

T_stg

Thermal Characteristics

Parameter

Symbol

Value

Unit

Thermal resistance junction-to-ambien

Thermal resistance junction-to-case for IGBT

Thermal resistance junction-to-case for Diod

R_θJA

R_θJC

62.5

0.55

0.8

°C/W

H1.03

Maspower

12 3 4 5 6

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