Datasheet > MSG20T120FQC

MSG20T120FQC

更新时间： 2024-09-17 18:09:27

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
7页	3082K
描述
TO-247

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中文翻译

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数据手册

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MSG20T120FQC 数据手册

MSG20T120FQC

N-Channel IGBT

Features



Low Gate charge

FS Technology

VCE(sat) = 1.7V @ IC = 20A

High Input Impedance

Short circuit withstand time 10 µs

Applications



PFC

UPS

Inverter

Absolute Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage

Gate-emitter voltage

V_CES

V_GES

1200

±30

T_C=25°C

Collector curre

I_C

T_C=100°C

Pulsed collector current, pulse time limited by Tjmax

Diode forward current @ T_C= 100°C

I_CM

I_F

Diode pulsed current, Pulse time limited by Tjmax

I_FM

120

T_C=25°C

Power dissipati

227

P_D

T_C=100°C

132

T_J

-55 to150

Operating Junction and storage temperature rang

°C

T_stg

Thermal Characteristics

Parameter

Symbol

Value

Unit

Thermal resistance junction-to-ambien

Thermal resistance junction-to-case for IGBT

Thermal resistance junction-to-case for Diod

R_θJA

R_θJC

62.5

0.55

0.65

°C/W

H1.02

Maspower

12 3 4 5 6 7

中文翻译

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