MSD700
Step Recovery Diode
Features
Rev. V1
Low Transition Time
High Efficiency
High Cutoff Frequency
High Reliability
RoHS* Compliant
Description
The MSD700 step recovery diode is designed with
epitaxial silicon which provides high output power
and efficiency in harmonic generator applications. It
is manufactured using a proven diode fabrication
process for high reproducibility. A unique silicon
dioxide passivation process assures greater stability
reliability and low leakage currents at high
temperatures.
This diode is available in chip form, and in ceramic
surface mount package with epoxy encapsulation
(CS19-1). The low junction capacitance (0.2 pF
typical) of the MSD700 enables the device to be
used in higher order multipliers and comb generator.
This rugged device is capable of reliable operation in
all military, commercial and industrial applications.
Electrical Specifications: TA = +25°C
Parameter
Test Conditions
Units
Min.
15
Typ.
—
Max.
—
Breakdown Voltage (VB)
Series Resistance (RS)
IR = 10 µA
V
IF = 25 mA
Ω
—
—
1.2
VR = 0 V, 1 MHz
VR = -6 V, 1 MHz
—
0.2
0.2
—
—
0.4
Junction Capacitance (CJ)
pF
Minority Carrier Lifetime (TL)
Transition Time (TT)
IF = 6 mA, IR = 10 mA
IF = 10 mA, VR = 10 V
—
ns
ps
—
—
—
8
—
—
60
—
Thermal Resistance (θJC)
°C/W
125
Absolute Maximum Ratings
Ordering Information
Parameter
Absolute Maximum
15 V
Part Number
Package
Reverse DC Voltage
Junction Temperature
Operating Temperature
Storage Temperature
MSD700-C11-W
MSD700-C19-1-W
MSD700-C19-1-R
400 piece waffle pack
100 piece waffle pack
3000 piece reel
+150°C
-55°C to +150°C
-65°C to +200°C
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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