型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSCSM120AM042CT6AG | MICROSEMI |
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Power Field-Effect Transistor, 495A I(D), 1200V, 0.0052ohm, 2-Element, N-Channel, Silicon | |
MSCSM120AM042CT6AG-Module | MICROCHIP |
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SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow str | |
MSCSM120AM042CT6LIAG-Module | MICROCHIP |
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SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow str | |
MSCSM120AM042D3AG-Module | MICROCHIP |
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? SiC Power MOSFET - Low RDS(on) - High temperature performance? Kelvin source for easy dr | |
MSCSM120AM042T6AG-Module | MICROCHIP |
获取价格 |
? SiC Power MOSFET - Low RDS(on) - High temperature performance? Kelvin source for easy dr | |
MSCSM120AM042T6LIAG-Module | MICROCHIP |
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? SiC Power MOSFET - Low RDS(on) - High temperature performance? Kelvin source for easy dr | |
MSCSM120AM08CT3AG-Module | MICROCHIP |
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SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow str | |
MSCSM120AM08T3AG-Module | MICROCHIP |
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? SiC Power MOSFET - Low RDS(on) - High temperature performance? Kelvin source for easy dr | |
MSCSM120AM11CT3AG-Module | MICROCHIP |
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SiC Power MOSFETLow RDS(on)High temperature performanceKelvin source for easy driveLow str | |
MSCSM120AM11T3AG-Module | MICROCHIP |
获取价格 |
? SiC Power MOSFET - Low RDS(on) - High temperature performance? Kelvin source for easy dr |