Datasheet > MSC81038

MSC81038

更新时间： 2024-09-16 12:50:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	19K
描述
NPN SILICON RF POWER TRANSISTOR

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MSC81038 数据手册

MSC81058

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .250 2L FLG

The ASI MSC81058 is Designed for

General Purpose Class C Power

Amplifier Applications up to 1.2 GHz.

ØD

.060 x 45°

CHAMFER

FEATURES:

• P_G= 10 dB min. at 10 W/ 1.0 GHz

• Hermetic Microstrip Package

• Omnigold™ Metalization System

• Emitter Ballasted

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.028 / 0.71

.740 / 18.80

.245 / 6.22

.128 / 3.25

.032 / 0.81

.255 / 6.48

.132 / 3.35

MAXIMUM RATINGS

.125 / 3.18

.117 / 2.97

1.0 A

35 V

I_C

V_CC

P_DISS

T_J

.110 / 2.79

.117 / 2.97

.560 / 14.22

.790 / 20.07

.225 / 5.72

.165 / 4.19

.003 / 0.08

.058 / 1.47

.119 / 3.02

.149 / 3.78

.570 / 14.48

.810 / 20.57

.235 / 5.97

.185 / 4.70

.007 / 0.18

.068 / 1.73

.135 / 3.43

.187 / 4.75

29 W @ T_C= 25 °C

-65 °C to +200 °C

8.5 °C/W

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 1.0 mA

I_C= 10 mA

I_E= 1.0 mA

V_CB= 28 V

BV_CER

BV_EBO

I_CBO

R_BE= 10 Ω

3.5

2.5

---

_CE= 5.0 V

I_C= 500 mA

120

h_FE

V_CB= 28 V

V_CC= 28 V

f = 1.0 MHz

f = 1.0 GHz

C_ob

P_G

P_OUT= 10 W

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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