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MSC81035MP PDF预览

MSC81035MP

更新时间: 2024-09-15 22:51:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频双极晶体管开关微波电子航空
页数 文件大小 规格书
4页 60K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MSC81035MP 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-PRDB-F4
针数:4Reach Compliance Code:unknown
风险等级:5.59Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:BASE
最大集电极电流 (IC):3 A配置:SINGLE
最小直流电流增益 (hFE):15最高频带:L BAND
JESD-30 代码:O-PRDB-F4元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:NPN
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:RADIAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MSC81035MP 数据手册

 浏览型号MSC81035MP的Datasheet PDF文件第2页浏览型号MSC81035MP的Datasheet PDF文件第3页浏览型号MSC81035MP的Datasheet PDF文件第4页 
MSC81035MP  
RF & MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
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REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
:1 VSWR CAPABILITY  
LOW THERMAL RESISTANCE  
INPUT MATCHING  
OVERLAY GEOMETRY  
.280 4LSL (S051)  
METAL/CERAMIC HERMETIC PACKAGE  
POUT = 35 W MIN. WITH 10.7 dB GAIN  
epoxy sealed  
ORDER CODE  
MSC81035MP  
BRANDING  
81035MP  
PIN CONNECTION  
DESCRIPTION  
The MSC81035MP is a medium power Class C  
transistor designed specifically for pulsed L-Band  
avionics applications. This device is a direct re-  
placement for the MSC1035MP. MSC81035MP of-  
fers improved saturated ouput power and collector  
efficiency based on the test circuit described  
herein.  
Low RFthermal resistance and computerized auto-  
matic wire bonding techniques ensure high relia-  
bility and product consistency.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
The MSC81035MP ishoused in the IMPAC pack-  
age with internal input matching.  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
PDISS  
IC  
Parameter  
Value  
150  
Unit  
W
A
Power Dissipation*  
Device Current*  
(TC 100°C)  
3.0  
VCC  
TJ  
Collector-Supply Voltage*  
55  
V
°
°
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
250  
C
C
TSTG  
65 to +150  
THERMAL DATA  
°
C/W  
RTH(j-c)  
Junction-Case Thermal Resistance*  
1.0  
*Applies only to rated RF amplifier operation  
Note:  
Thermal Resistance determined by Infra-Red Scanning of Hot-Spot  
Junction Temperature at rated RF operating conditions.  
1/4  
October 1992  

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