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MSC81035M PDF预览

MSC81035M

更新时间: 2024-09-15 22:51:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管射频微波电子放大器航空局域网
页数 文件大小 规格书
4页 63K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MSC81035M 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-PRFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.59其他特性:HIGH RELIABILITY
外壳连接:BASE最大集电极电流 (IC):3 A
配置:SINGLE最小直流电流增益 (hFE):15
最高频带:L BANDJESD-30 代码:O-PRFM-F2
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):150 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MSC81035M 数据手册

 浏览型号MSC81035M的Datasheet PDF文件第2页浏览型号MSC81035M的Datasheet PDF文件第3页浏览型号MSC81035M的Datasheet PDF文件第4页 
MSC81035M  
RF & MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
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.
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REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
:1 VSWR CAPABILITY  
LOW THERMAL RESISTANCE  
INPUT MATCHING  
OVERLAY GEOMETRY  
METAL/CERAMIC HERMETIC PACKAGE  
POUT = 35 W MIN. WITH 10.7 dB GAIN  
.280 2LFL (S068)  
epoxy sealed  
ORDER CODE  
MSC81035M  
BRANDING  
81035M  
PIN CONNECTION  
DESCRIPTION  
The MSC81035M is a medium power Class C  
transistor designed specifically for pulsed L-Band  
avionics applications. This device is a direct re-  
placement for the MSC1035M. MSC81035M of-  
fers improved saturated ouput power and collec-  
tor efficiency based on the test circuit described  
herein.  
Low RF thermal resistance and computerized au-  
tomatic wire bonding techniques ensure high reli-  
ability and product consistency.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
The MSC81035M is housed in the IMPAC  
package with internal input matching.  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
PDISS  
IC  
Parameter  
Value  
150  
3.0  
Unit  
W
A
Power Dissipation*  
Device Current*  
(TC 100°C)  
VCC  
TJ  
Collector-Supply Voltage*  
55  
V
°
°
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
250  
C
C
TSTG  
65 to +200  
THERMAL DATA  
°
C/W  
RTH(j-c)  
Junction-Case Thermal Resistance*  
1.0  
*Applies only to rated RF amplifier operation  
Note:  
Thermal Resistance determined by Infra-Red Scanning of Hot-Spot  
Junction Temperature at rated RF operating conditions.  
1/4  
September 2, 1994  

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