MSC8001

更新时间： 2024-09-14 04:14:35

品牌	Logo	应用领域
ASI		晶体晶体管高功率电源
页数	文件大小	规格书
1页	18K
描述
HIGH POWER GaAs FET

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中文翻译

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技术参数
数据手册

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MSC8001 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

MSC8001 数据手册

MSC8001

HIGH POWER GaAs FET

FEATURES INCLUDE:

•

27.5 dBm Output Power with 7db

Associated Gain at 8 GHz

Power Optimized Design Provides

High Power-added Efficiency

FET PACKAGE TYPE 30

Large Cross Section Ti/Pt/Au

Gates Enhance Durability and

Reliability

•

Chip Devices are Selected from

Standard Military Grade Wafers

Hermetic Metal/Ceramic Package

Suitable for Hi-Rel Applications

Custom Electrical Test and

Screening Available for Source

Control Drawings

TRANS1.SYM

RF ELECTRICAL SPECIFICATIONS ^T_A^{= 25}^O

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

MAX AVAILABLE GAIN

MAG

8.5

FREQUENCY = 8.0 GHz

OUTPUT POWER AT MAG TUNING

FREQUENCY = 8.0 GHz

PMAG

dBm

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

中文翻译

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