Datasheet > MSC2X100SDA070

MSC2X100SDA070

更新时间： 2024-09-27 14:53:35

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
7页	922K
描述
MSC2X100SDA070 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devices. Micr

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MSC2X100SDA070 数据手册

MSC2X101/100SDA070J Dual Silicon Carbide Schottky Barrier Diodes

Product Overview

The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the

performance over silicon diode solutions while lowering the total cost of ownership for high-voltage

applications. MSC2X101/100SDA070J are dual 700 V, 100 A SiC SBD devices in a SOT-227 package.

Figure 2 • Anti-parallel MSC2X100SDA070J

Figure 1 • Parallel MSC2X101SDA070J

Features

The following are key features of the MSC2X101SDA070J and MSC2X100SDA070J devices:

•

No reverse recovery

Low forward voltage

Low leakage current

Avalanche-energy rated

RoHS compliant

•

Isolated voltage to 2500 V

Beneﬁts

The following are beneﬁts of the MSC2X101SDA070J and MSC2X100SDA070J devices:

•

High switching frequency

Low switching losses

Low noise (EMI) switching

Higher reliability systems

Increased system power density

Direct mounting to the heat sink (isolated package)

•

053-4108 MSC2X101/100SDA070J Datasheet Revision A

12 3 4 5 6 7

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MSC2X100SDA120	MICROCHIP	获取价格	MSC2X100SDA120 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devic
MSC2X101SDA070	MICROCHIP	获取价格	MSC2X101SDA070 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devic
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