Datasheet > MSC120HF120T2NH

MSC120HF120T2NH

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
银茂微 - SILVERMICRO		/
页数	文件大小	规格书
10页	567K
描述
SiC MOS-Half Bridge-1200V

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MSC120HF120T2NH 数据手册

MSC120HF120T2NH

SiC MOSFET Module

Features：



Ultra Low Loss

High-Frequency Operation

Zero Reverse Recovery Current from Diode

Zero Turn-off Tail Current from MOSFET

Normally-off, Fail-safe Device Operation

Easy of Paralleling

Copper Baseplate and Aluminum Nitride Insulator

Applications：



Induction Heating

DC/DC Converters

Solar and Wind Inverters

Line Regen Drives

Battery Chrage

Absolute Maximum Ratings (T_C=25℃unless otherwise specified)

Symbol

V_DSmax

V_GSmax

V_GSop

Description

Value

1200

-10/+25

-5/20

193

Units

Drain-Source Voltage

Gate-Source Voltage

Absolute Maximum values

Recommended Operational Values

V_GS=20V,T_C=25℃

I_D

Continuous Drain Current

V_GS=20V,T_C=90℃

138

I_D(pluse)

P_D

Pulsed Drain Current

Power Dissipation

Pulse width t_plimited by T_jmax

T_c=25℃，T_j=150℃

480

925

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