Datasheet > MSB92T1G

MSB92T1G

更新时间： 2024-09-29 05:50:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管高压
页数	文件大小	规格书
4页	74K
描述
PNP Silicon General Purpose High Voltage Transistor

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MSB92T1G 数据手册

MSB92T1G

PNP Silicon General

Purpose High Voltage

Transistor

This PNP Silicon Planar Transistor is designed for general purpose

amplifier applications. This device is housed in the SC-59 package

which is designed for low power surface mount applications.

http://onsemi.com

COLLECTOR

Features

•ꢀThis is a Pb-Free Device

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Value

-300

-5.0

150

Unit

Vdc

Collector‐Base Voltage

Collector‐Emitter Voltage

Emitter‐Base Voltage

(BR)CBO

(BR)CEO

(BR)EBO

Vdc

BASE

EMITTER

Vdc

Collector Current - Continuous

THERMAL CHARACTERISTICS

Rating

mAdc

MARKING

DIAGRAM

Symbol

Max

150

Unit

°C

SC-59

Power Dissipation (Note 1)

Junction Temperature

J2D MG

CASE 318D

STYLE 1

150

Storage Temperature Range

stg

-ā55X+ā150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

RecommendedOperating Conditions may affect device reliability.

1. Device mounted on a FR‐4 glass epoxy printed circuit board using the minimum

recommendedfootprint.

J2D= Device Marking Code

= Date Code

= Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

MSB92T1G

Package

Shipping

3000/Tape & Reel

SC-59

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

©ꢀ Semiconductor Components Industries, LLC, 2007

August, 2007 - Rev. 0

Publication Order Number:

MSB92T1G/D

12 3 4

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