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MSB92AWT1G PDF预览

MSB92AWT1G

更新时间： 2024-02-27 14:35:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管光电二极管高压放大器
页数 文件大小 规格书
4页 56K
描述
PNP Silicon General Purpose High Voltage Transistor

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中文翻译

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MSB92AWT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-70包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.94最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：300 V配置：SINGLE
最小直流电流增益 (hFE)：25JESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：50 MHzBase Number Matches：1

MSB92AWT1G 数据手册

 浏览型号MSB92AWT1G的Datasheet PDF文件第2页浏览型号MSB92AWT1G的Datasheet PDF文件第3页浏览型号MSB92AWT1G的Datasheet PDF文件第4页 
MSB92WT1, MSB92AWT1  
Preferred Device  
PNP Silicon General  
Purpose High Voltage  
Transistor  
This PNP Silicon Planar Transistor is designed for general purpose  
amplifier applications. This device is housed in the SC-70/SOT-323  
package which is designed for low power surface mount applications.  
http://onsemi.com  
COLLECTOR  
3
Features  
• Pb−Free Packages are Available  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Value  
Unit  
1
2
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
−300  
Vdc  
(BR)CBO  
(BR)CEO  
(BR)EBO  
BASE  
EMITTER  
V
V
−300  
−5.0  
500  
Vdc  
Vdc  
mAdc  
V
3
SC−70 (SOT−323)  
CASE 419  
Collector Current − Continuous  
Electrostatic Discharge  
I
C
1
STYLE 3  
2
ESD  
MBMu16,000,  
MMu2,000  
THERMAL CHARACTERISTICS  
MARKING DIAGRAM  
Rating  
Symbol  
Max  
150  
150  
Unit  
mW  
°C  
Power Dissipation (Note 1)  
Junction Temperature  
P
D
xx M G  
G
T
J
Storage Temperature Range  
T
stg  
−55 to +150  
°C  
1
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
xx = Device Code  
x= 2D or D2  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MSB92WT1  
SC−70/  
3000/Tape & Reel  
SOT−323  
MSB92WT1G  
SC−70/  
SOT−323  
(Pb−Free)  
3000/Tape & Reel  
MSB92AWT1  
SC−70/  
SOT−323  
3000/Tape & Reel  
3000/Tape & Reel  
MSB92AWT1G  
SC−70/  
SOT−323  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 6  
MSB92WT1/D  
 
1234

中文翻译

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MSB92AWT1G 替代型号

型号 品牌 替代类型 描述 数据表
MSB92WT1G ONSEMI

类似代替

 PNP Silicon General Purpose High Voltage Transistor
MSB92AWT1 ONSEMI

类似代替

 PNP Silicon General Purpose High Voltage Transistor

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