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MSB92AS1WT1G PDF预览

MSB92AS1WT1G

更新时间： 2024-02-19 05:29:29
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管高压放大器
页数 文件大小 规格书
3页 85K
描述
PNP Silicon General Purpose High Voltage Transistor

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中文翻译

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MSB92AS1WT1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SC-70
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：7 weeks风险等级：5.67
Is Samacsys：N最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：300 V配置：SINGLE
最小直流电流增益 (hFE)：25JESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：50 MHzBase Number Matches：1

MSB92AS1WT1G 数据手册

 浏览型号MSB92AS1WT1G的Datasheet PDF文件第2页浏览型号MSB92AS1WT1G的Datasheet PDF文件第3页 
MSB92ASWT1G,  
MSB92AS1WT1G  
PNP Silicon General  
Purpose High Voltage  
Transistor  
http://onsemi.com  
This PNP Silicon Planar Transistor is designed for general purpose  
amplifier applications. This device is housed in the SC-70/SOT-323  
package which is designed for low power surface mount applications.  
COLLECTOR  
3
Features  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
2
BASE  
EMITTER  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Value  
−300  
−300  
−5.0  
500  
Unit  
Vdc  
Vdc  
Vdc  
mAdc  
V
3
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
1
V
V
2
SC−70 (SOT−323)  
CASE 419  
Collector Current − Continuous  
Electrostatic Discharge  
I
C
STYLE 3  
ESD  
HBMu16,000,  
MMu2,000  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Max  
Unit  
D3 M G  
D5 M G  
Power Dissipation (Note 1)  
P
150  
mW  
D
G
G
Junction Temperature  
T
150  
°C  
°C  
J
1
1
Storage Temperature Range  
T
stg  
−55 to +150  
MSB92ASWT1G  
MSB92AS1WT1G  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
Dx = Device Code  
M
= Date Code*  
= Pb−Free Package  
G
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
3000/Tape & Reel  
MSB92ASWT1G  
SC−70  
(Pb−Free)  
3000/Tape & Reel  
MSB92AS1WT1G SC−70  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
September, 2010 − Rev. 3  
MSB92ASWT1/D  
 
123

中文翻译

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MSB92AS1WT1G 替代型号

型号 品牌 替代类型 描述 数据表
SMMBTA92LT1G ONSEMI

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